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Analysis

1 / 517,668
1.WO/2000/069635HEATING RESISTOR AND MANUFACTURING METHOD THEREOF
WO - 23.11.2000
Int.Class B41J 2/14
BPERFORMING OPERATIONS; TRANSPORTING
41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
2Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
005characterised by bringing liquid or particles selectively into contact with a printing material
01Ink jet
135Nozzles
14Structure thereof
 Appl.No PCT/JP2000/002950 Applicant CASIO COMPUTER CO., LTD. Inventor NAKAMURA, Osamu
Forming a heating resistor which emits heat by electric current applied thereto, with non-metallic materials comprising at least tantalum (Ta), silicon (Si), oxygen (O), and nitrogen (N). In a case where such heating resistor has mole ratio Si/Ta of 0.35<Si/Ta<0.80, oxygen mol% of 25 mol% to 45 mol%, and nitrogen mol% of 5 mol% to 25 mol%, the heating resistor shows resistivity equal to or greater than 4 mΩcm, peak angle 2 θ of X-ray diffraction strength is equal to or smaller than 37.5 degrees, and has resistance over 100,000,000 pulses. The heating resistor having the above characteristics is suitable for a print head of a thermal ink-jet printer. Further, the heating resistor shows stable but high resistivity, after the heating resistor is annealed.
2.WO/2003/038875METHOD FOR PHOTOLITHOGRAPHIC STRUCTURING BY MEANS OF A CARBON HARD MASK LAYER WHICH HAS A DIAMOND-LIKE HARDNESS AND IS DEPOSITED BY MEANS OF A PLASMA METHOD
WO - 08.05.2003
Int.Class H01L 21/033
HELECTRICITY
01ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
033comprising inorganic layers
 Appl.No PCT/DE2002/004034 Applicant INFINEON TECHNOLOGIES AG Inventor CZECH, Guenther
According to the invention, a carbon hard mask layer (2) is applied to a substrate to be structured (1) by means of a plasma-enhanced deposition method in such a way that it has a diamond-like hardness in at least one vertical section of a layer. During the production of said diamond-type vertical section of a layer, the deposition parameters are adjusted in such a way that certain diamond-type growth regions are removed in situ by means of subsequent etching processes, and other diamond-type regions remain.
3.WO/2003/046961PHOTOLITHOGRAPHIC METHOD FOR FORMING A STRUCTURE IN A SEMICONDUCTOR SUBSTRATE
WO - 05.06.2003
Int.Class G03F 7/09
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
 Appl.No PCT/DE2002/004223 Applicant INFINEON TECHNOLOGIES AG Inventor KIRCHHOFF, Markus
To form a structure in a semi-conductor substrate (1), a buffer layer configured as a carbon layer (3) is created between a photo-resist layer (4) and an anti-reflective layer (2), which are formed on the substrate (1). The structure is first created in the photo-resist layer (4) by a lithographic process and in a subsequent step is transferred to the underlying layers (1, 2, 3).
4.WO/2000/046032INK-JET RECORDING APPARATUS CAPABLE OF LIMITEDLY USING ONLY GENUINE INK CARTRIDGE, INK CARTRIDGE USABLE IN THE SAME, AND INK REFILLING MEMBER
WO - 10.08.2000
Int.Class B41J 2/175
BPERFORMING OPERATIONS; TRANSPORTING
41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
2Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
005characterised by bringing liquid or particles selectively into contact with a printing material
01Ink jet
17characterised by ink handling
175Ink supply systems
 Appl.No PCT/JP2000/000538 Applicant CASIO COMPUTER CO., LTD. Inventor KOBAYASHI, Kenji
Three ink storage chambers (68) stored into a main body case of an ink cartridge (44) are isolated from four surfaces of this main case body by way of a partition (66) and depressing partition portions projected from this portion (76). Also, these ink storage chambers are isolated from a bottom portion of the main body case by a stepped portion (79) of a lower cylindrical portion (77), and are arranged by forming space between a lid and the own ink chambers. Only refilling hole portions of an upper cylindrical portion are communicated with an external portion via holes of the lid. A label on which a trademark 'ABC' is printed is attached onto the upper portions of the three refilling hole portions (72). A label reading apparatus (31) is provided on the side of an ink-jet printer, and a printing operation by any ink cartridge other than the genuine-labeled ink cartridge is not carried out. As a genuine ink refilling member, at least ink bottles and a label are employed as a set of such a genuine ink refilling member. The ink cannot be refilled via a hole formed in any portion of an ink cartridge, except for the refilling hole portion.
5.WO/2000/073077INK-JET PRINTER HEAD AND MANUFACTURING METHOD THEREOF
WO - 07.12.2000
Int.Class B41J 2/14
BPERFORMING OPERATIONS; TRANSPORTING
41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
2Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
005characterised by bringing liquid or particles selectively into contact with a printing material
01Ink jet
135Nozzles
14Structure thereof
 Appl.No PCT/JP2000/003280 Applicant CASIO COMPUTER CO., LTD. Inventor KAMADA, Hideki
Each of heating elements comprises a heating resistor (24), and a pair of a common electrode (21) and an individual electrode (23) formed on ends of said heating resistor (24) so that a heating area (25) of the heating resistor (24) is exposed. A barrier layer (41) covers the electrodes (21, 23) so that the electrodes are not exposed to the ink in the ink flow passage, that is, not only upper surface of the electrodes (21, 23), but also edges thereof are covered with the barrier layer (41). The barrier layer (41) is made of, for example, single atomic metal such as Ta and Ti, oxide, corrosion resistant amorphous alloy, titanium nitride, titanium-tungsten, or the like. The barrier layer (41) has the thickness of 10 to 1,000 nm, and is made by electroless plating or the like. The barrier layer (41) is effective in preventing not only corrosion but also migration as contact surface corrosion.
6.WO/1997/045433PROCESS FOR THE PREPARATION OF BENZYL-METAL COMPOUNDS AND PROCESS FOR THE PREPARATION OF 4-PHENYL-1-BUTENES BY THE USE OF THE SAME
WO - 04.12.1997
Int.Class C07C 1/32
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
CACYCLIC OR CARBOCYCLIC COMPOUNDS
1Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon
32starting from compounds containing hetero atoms other than, or in addition to, oxygen or halogen
 Appl.No PCT/JP1997/001843 Applicant K.I CHEMICAL INDUSTRY CO., LTD. Inventor TSUMAKI, Hidetoshi
A process for the preparation of benzyl-metal compounds of general formula (2) wherein M is an alkali metal by reacting a phenyl-metal compound of general formula (1) wherein M is an alkali metal with toluene in the presence of a catalytic amount of an amine, which permits the industrially advantage preparation of the objective compounds in a high yield; and a process for the preparation of 4-phenyl-1-butenes by reacting a benzyl-metal compound prepared by the above process with an allyl halide.
7.WO/2003/050817SEGMENTED WRITE LINE ARCHITECTURE
WO - 19.06.2003
Int.Class G11C 11/16
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
 Appl.No PCT/EP2002/014230 Applicant INFINEON TECHNOLOGIES AG Inventor ARNDT, Christian
This invention presents a novel write line segmentation architecture for writing magnetoresistive random access memories (MRAM). Only the memory cells in selected segment get a high hard axis fieldgenerated by a write line current. Memory cells of deselected segments do not receive this hard axisfield. This prevents an undesired state change in particularly sensitive memory cells.
8.WO/2002/078084METHOD FOR PRODUCING FERROELECTRIC MEMORY CELLS
WO - 03.10.2002
Int.Class H01L 21/02
HELECTRICITY
01ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
 Appl.No PCT/DE2002/001054 Applicant INFINEON TECHNOLOGIES AG Inventor KASKO, Igor
The invention relates to a method for producing ferroelectric memory cells in accordance with the stack principle. According to said method, an adhesive layer (2, 3) is formed between a lower capacitor electrode (6) of a memory capacitor and a conductive plug (1), which is formed below said electrode and makes an electric connection between said capacitor electrode (6) and a transistor electrode of a selection transistor that is formed in or on a semiconductor wafer. An oxygen diffusion barrier (4, 5) is formed above the adhesive layer and once the ferroelectric has been deposited, the adhesive layer and the barrier are subjected to rapid thermal processing (RTP) in an oxygen atmosphere. The method is characterised by the following steps: (A) Determination of the oxygen speed of the adhesive layer (2, 3) and the diffusion coefficient (DOxygen(T)) of oxygen in the material of the adhesive layer (2, 3), dependent on the temperature (T); (B) Determination of the diffusion coefficient (DSilicon(T)) of silicon in the material of the adhesive layer (2, 3), dependent on the temperature and (C) Calculation of an optimal temperature range for the RTP step from the two diffusion coefficients, (DOxygen(T)) and (DSilicon(T)) that have been determined for a predetermined layer thickness (dBARR) and layer width (bBARR) of the layer system consisting of the adhesive layer and the oxygen diffusion barrier, so that during the RTP step the siliconisation of the adhesive layer occurs more rapidly than its oxidation.
9.WO/1997/005676OPTOELECTRONIC TRANSCEIVER MODULE LASER DIODE STABILIZER AND BIAS CONTROL METHOD
WO - 13.02.1997
Int.Class H01S 5/042
HELECTRICITY
01ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping
042Electrical excitation
 Appl.No PCT/US1996/010616 Applicant METHODE ELECTRONICS, INC. Inventor GILLILAND, Patrick, B.
A power stabilizer maintains a constant level of output power from a laser transmitter. The laser transmitter has a laser diode which produces an optical output which corresponds to the level of bias current received. In addition, the laser transmitter has a photodiode which produces a feedback signal which corresponds to the optical output power being produced by the laser diode. Furthermore, the power stabilizer consists of a digitally controlled potentiometer for producing a reference input signal and an op-amp for comparing the feedback signal and the reference input signal to produce a control signal to supply the bias current.
10.WO/2004/017404USE OF METAL OXIDE MASKS FOR TREATING SURFACES IN THE PRODUCTION OF MICROCHIPS
WO - 26.02.2004
Int.Class H01L 21/311
HELECTRICITY
01ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
 Appl.No PCT/DE2003/002378 Applicant INFINEON TECHNOLOGIES AG Inventor JAKSCHIK, Stefan
The invention relates to a method for modifying a semiconductor section by section. For doping purposes, the sections that for example are to remain undoped, are masked by a metal oxide, e.g. aluminium oxide (6). The semiconductor is subsequently doped, e.g. from a gas phase, in those sections (7) that have not been covered by the aluminium oxide. The aluminium oxide is then selectively removed, for example using hot phosphoric acid, thus leaving sections of the semiconductor surface consisting of silicon, silicon oxide or silicon nitride on the wafer.
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