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Analysis

1 / 484,606
1.WO/1982/002116REMOVING HARDENED ORGANIC MATERIALS DURING FABRICATION OF INTEGRATED CIRCUITS
WO - 24.06.1982
Int.Class G03F 7/42
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
42Stripping or agents therefor
 Appl.No PCT/US1981/001542 Applicant WESTERN ELECTRIC COMPANY Inventor KINSBRON, Eliezer
In an integrated circuit fabrication sequence, a hardened mask layer (12) adhered to an underlying substrate (10) is removed from the substrate by a solvent that comprises anhydrous hydrazine and dimethyl sulfoxide. The solvent rapidly penetrates the interface between the pattern and the underlying substrate and quickly breaks the adhesive bonds therebetween. Other materials (e.g., Al, Si, SiO2) in the structure being fabricated are not deleteriously affected by the solvent.
2.WO/1983/000769MULTIPLE LINE REGISTER WITH WRITE CONTROL
WO - 03.03.1983
Int.Class G11C 19/00
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
19Digital stores in which the information is moved stepwise, e.g. shift registers
 Appl.No PCT/US1982/001111 Applicant NCR CORPORATION Inventor SCHNATHORST, Vernon, Keith
A multiple line register (15) is provided with a control circuit (14) which regulates the entry of new data into the register (15). The register (15) includes a bank of D-type, master-slave flip-flops operable under the control of phased clock signals (O/1, O/2). The control circuit (14) includes a bootstrap operated, series pass transistor (Q1) which couples the first phase clock signal (O/1) to the master stage of each flip-flop under the control of write command signal (WRITE). The series pass transistor (Q1) is operated to a conductive state prior to the onset of the first phase signal (O/1). The register is of simple construction and substantial replication of the first phase signal characteristics is achieved in both time and amplitude.
3.WO/1987/001201LOW R.F. DOSAGE MAGNETIC RESONANCE IMAGING OF HIGH VELOCITY FLOWS
WO - 26.02.1987
Int.Class G01F 1/716
GPHYSICS
01MEASURING; TESTING
FMEASURING VOLUME, VOLUME FLOW, MASS FLOW, OR LIQUID LEVEL; METERING BY VOLUME
1Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
704using marked regions or existing inhomogeneities within the fluid stream, e.g. statistically occurring variations in a fluid parameter
708Measuring the time taken to traverse a fixed distance
716using electron paramagnetic resonance or nuclear magnetic resonance
 Appl.No PCT/GB1986/000459 Applicant PICKER INTERNATIONAL INC. Inventor NAYLER, Graham, Leslie
A main magnetic field coil (10) and control (12) cause a generally uniform main magnetic field through an image region. A resonance excitation control (22) causes an R.F. coil (20) to generate excitation pulses (100). A slice gradient control (32) and a read gradient control (34) cause a gradient coil (30) to generate complementary slice selection gradient profiles (112, 114) and complementary read gradient profiles (122, 124) in such a manner that the effective first moment in time is substantially zero. By time shifting a pulse in one or both of the slice selection and read gradient sequences (Figs. 3 and 4), resonating nuclei in the selected slice can be phase encoded. A transform algorithm (40) transforms field echo signals (102) received by the R.F. coil into image representations. A first memory (54) receives real and imaginary portions of the image representations when the read and slice selection gradients are not shifted and a second memory (56) receives the image representations when one or both of the read and slice selection gradients are time shifted. A phase difference map (70) is calculated (60) from the arctangent of phase difference values derived from the first and second images. The intensity of each pixel of the phase difference map varies with phase shift, hence velocity.
4.WO/1987/003769METHOD AND DEVICE FOR COMPRESSING DIGITAL IMAGES BY CONDITIONAL CODING WITHOUT INFORMATION LOSS
WO - 18.06.1987
Int.Class H04N 7/26
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
7Television systems
24Systems for the transmission of television signals using pulse code modulation
26using bandwidth reduction
 Appl.No PCT/FR1986/000413 Applicant THOMSON-CGR Inventor LIENARD, Jean
In order to compress pixel values of a digitalized image, the values of neighbouring pixels (Y, Z) of the pixel (X) processed are stored (2), and as a function of their respective values (6, 7), there is produced a code number resulting in the coding according to a composed code or the coding of the pixel itself, with a prefix (12). The successive codes are formatted and concatenated to be stored (16-22). Applications in the field of medical imaging.
5.WO/1983/002668GAS ANALYZING TECHNIQUES
WO - 04.08.1983
Int.Class F02D 41/14
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
02COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
DCONTROLLING COMBUSTION ENGINES
41Electrical control of supply of combustible mixture or its constituents
02Circuit arrangements for generating control signals
14Introducing closed-loop corrections
 Appl.No PCT/US1982/001158 Applicant SUN ELECTRIC CORPORATION Inventor BECK, James, E.
Gas analyzing techniques for monitoring the amount of oxygen in the exhaust of motor vehicles. An oxygen sensor (10) produces a sensor signal having a sensor value proportional to the partial pressure of the oxygen produced by the motor vehicle. A summer circuit (17) generates a resulting signal proportional to the sum of the sensor value, another value produced by a differentiator (13) proportional to the first derivative of the sensor value and a third value produced by another differentiator (15) proportional to the second derivative of the sensor value. The resulting signal can be used to predict the final sensor value at a point in time earlier than would be otherwise possible.
6.WO/1983/003029DIFFUSION OF SHALLOW REGIONS
WO - 01.09.1983
Int.Class H01L 21/225
HELECTRICITY
01ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
225using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
 Appl.No PCT/US1983/000169 Applicant WESTERN ELECTRIC COMPANY, INC. Inventor KINSBRON, Eliezer
A method for forming a shallow and highly concentrated arsenic doped surface layer (20) in a silicon bulk region includes the steps of forming an arsenic doped polysilicon layer (11) in contact with a preselected area of a bulk region (14) surface in which the surface layer is to be formed and completely oxidizing the polysilicon layer at a rate exceeding the rate at which arsenic diffuses in the bulk region. Since arsenic has a relatively high silicon/silicon dioxide segregation coefficient and the oxidation rate exceeds the arsenic diffusion rate, arsenic accumulates at the silicon dioxide/silicon interface during oxidation, and nearly all of the arsenic in the region of the polysilicon layer above the preselected area is driven into the bulk region surface by the oxidation to form an impurity layer having a very high surface concentration of arsenic.
7.WO/1989/006019IMAGE CHARACTER ENHANCEMENT USING A STROKE STRENGTHENING KERNEL
WO - 29.06.1989
Int.Class G06K 9/44
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
9Methods or arrangements for recognising patterns
36Image preprocessing, i.e. processing the image information without deciding about the identity of the image
44Smoothing or thinning of the pattern
 Appl.No PCT/US1988/004656 Applicant EASTMAN KODAK COMPANY Inventor BARSKI, Lori, Lynn
Character stroke is strengthened by processing video image data with a 16 x 16 kernel, and moving the kernel one pixel at a time through the image. For each pixel position, sections of the kernel, are selectively filled with black pixels in proportion to the number of black pixels in each section, in accordance with a set of predetermined rules.
8.WO/1983/000104MASKING PORTIONS OF A SUBSTRATE
WO - 20.01.1983
Int.Class C23C 14/04
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
04Coating on selected surface areas, e.g. using masks
 Appl.No PCT/US1982/000818 Applicant WESTERN ELECTRIC COMPANY, INC. Inventor HOLBROOK, Walter, Raymond
Certain mask materials, such as gold, are difficult to remove without damaging the underlying workpiece. This problem is solved in a process wherein, as a first step, a "parting" layer (44) of a metal selected from the group consisting of nickel, aluminum, indium and tin is applied to the substrate (10) to be masked. Over the parting layer is applied the masking layer (22). After processing, the parting layer (44) is treated to detach it along with the mask from the substrate. For proton bombardment of a substrate which included gallium arsenide, the parting layer is preferably nickel, the mask is preferably gold, and the detaching agent includes hydrochloric acid.
9.WO/1982/002380FLUORINATED MONOPHENOLS AND DIPHENOLS AND METHOD FOR THEIR PREPARATION
WO - 22.07.1982
Int.Class C07C 37/11
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
CACYCLIC OR CARBOCYCLIC COMPOUNDS
37Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
11by reactions increasing the number of carbon atoms
 Appl.No PCT/US1981/001696 Applicant GENERAL ELECTRIC COMPANY Inventor MARK, Victor
Phenol reactants and fluorinated aldehydes or fluorinated ketones are reacted in the presence of organic sulfonic acid catalysts to yield fluorinated monophenols and fluorinated diphenols. Fluorinated monophenols can be isolated and reacted with additional phenol reactant in the presence of organic sulfonic acid catalysts to yield asymmetrical, as well as symmetrical, fluorinated diphenols. A preferred organic sulfonic acid catalyst is methanesulfonic acid. The novel fluorinated monophenols have a hydroxy group and a fluorinated aryl radical or fluorinated alkyl radical substituted upon the benzylic carbon atom. The novel fluorinated diphenols have at least one fluorinated aryl radical or fluorinated alkyl radical substituted upon the methylene carbon atom of the bisphenol.
10.WO/2000/021732BIAXIALLY ORIENTED POLYOLEFIN PIPE
WO - 20.04.2000
Int.Class B29C 47/54
BPERFORMING OPERATIONS; TRANSPORTING
29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
47Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
08Component parts, details or accessories; Auxiliary operations
36Means for plasticising or homogenising the moulding material or forcing it through the nozzle or die
54using press rams or pistons
 Appl.No PCT/JP1999/005453 Applicant SEKISUI CHEMICAL CO., LTD. Inventor UEDA, Naoki
An axially and circumferentially oriented, i.e., biaxially oriented polyolefin pipe, wherein a degree of orientation thereof in the circumferential direction is set higher than that thereof in the axial direction, whereby providing a biaxially oriented pipe having an excellent elastic deformability; i.e. excellent deformation follow-up characteristics with respect to an external stress and an improved circumferential elasticity; and a high earthquake resistance which constitute performances required by this pipe when it is used as a buried pipe.
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