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1 / 467,552
1.WO/1994/015034HIGH R SUPER INSULATION PANEL
WO - 07.07.1994
Int.Class C03B 37/15
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL; SUPPLEMENTARY PROCESSES IN THE MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL
37Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
10Non-chemical treatment
14Re-forming fibres or filaments
15with heat application, e.g. for making optical fibres
 Appl.No PCT/US1993/012536 Applicant OWENS-CORNING FIBERGLAS CORPORATION Inventor RUSEK, Stanley, J.
An insulation panel (18) comprises an insulation board (10) of glass fibers and a partially evacuated gas-tight envelope (20) encapsulating the board (10), where, prior to the evacuation of the envelope (20), the board (10) has been subjected to a heat setting process in which the board (10) is raised to a heat setting temperature above the strain temperature of the glass but below the softening temperature of the glass and to a pressure applied by opposed platens (12, 14) followed by a quick release of the board (10) from the platens (12, 14) prior to substantial cooling of the board (10).
2.WO/2003/017331MEMORY CELL WITH A TRENCH CAPACITOR AND VERTICAL SELECTION TRANSISTOR AND ANNULAR CONTACTING AREA FORMED BETWEEN THEM
WO - 27.02.2003
Int.Class H01L 21/8242
HELECTRICITY
01ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8242Dynamic random access memory structures (DRAM)
 Appl.No PCT/DE2002/002559 Applicant INFINEON TECHNOLOGIES AG Inventor BIRNER, Albert
The top capacitor electrode (10) of the trench capacitor is connected to an epitactically grown source/drain area (21) of the selection transistor (20) by an annular, monocrystalline Si contacting area (7.1). The gate electrode layer (24) has an oval peripheral course around the transistor (20), wherein the oval peripheral courses of the gate electrode layers (24) form overlapping areas (24.3) of memory cells placed in rows next to one another along a word line in order to enhance packing density.
3.WO/2002/058070SELECTION DEVICE FOR A SEMICONDUCTOR MEMORY DEVICE
WO - 25.07.2002
Int.Class G11C 11/16
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
 Appl.No PCT/DE2002/000141 Applicant INFINEON TECHNOLOGIES AG Inventor VIEHMANN, Hans-Heinrich
The invention relates to a selection device for a semiconductor memory device. The aim of the invention is to prevent voltage drops caused by read currents in a column multiplexer (10) of a semiconductor memory device (1). To this end, the switch devices (12) of the selection device (10) comprise two switch elements (T1, T2). The invention is further characterized in that associated bit lines (4) can be interlinked with a potential sampling connection (22) or a current feed connection (24) of a respective associated sense amplifier (20) by means of the first and the second switch element (T1, T2).
4.WO/2004/006011METHOD AND ARRANGEMENT FOR THE MANIPULATION OF RETICLES
WO - 15.01.2004
Int.Class G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
 Appl.No PCT/DE2003/002108 Applicant INFINEON TECHNOLOGIES AG Inventor SCHEDEL, Thorsten
The invention relates to an arrangement for the depositing or withdrawing of reticles, provided with a magazine housing in which an withdrawing and depositing magazine may be inserted, which has at least one horizontal housing compartment for housing a reticle, a manipulator and a drive unit for moving the reticle magazine and/or the manipulator relative to each other. The invention further relates to a method for the withdrawing or depositing of reticles in photolithographic processes, whereby reticles provided with pellicles are moved from a housing compartment in the withdrawing and depositing magazine after insertion of an withdrawing and depositing magazine in a magazine housing, by means of a manipulator from a housing compartment in the withdrawing and deposition magazine and supplied to the lithographic process. The aim of the invention is to prevent reticles, pellicles arranged thereon or magazines to lie outside the determined tolerance range of the manipulation region of the manipulator and thus prevent damage thereto or destruction thereof, at least for the reticle, on application to the photolithographic process. The above is achieved, whereby a corresponding sensor is provided for the reticle, at least indirectly connected to the drive unit for control thereof, from which data relevant to the reticle may be obtained and by means of which data the movement of the manipulator is controlled.
5.WO/2003/038829STORAGE ASSEMBLY
WO - 08.05.2003
Int.Class G11C 5/14
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
5Details of stores covered by group G11C11/63
14Power supply arrangements
 Appl.No PCT/DE2002/003812 Applicant INFINEON TECHNOLOGIES AG Inventor BANGERT, Joachim
The invention relates to a storage assembly comprising an energy store (E2 E5), which accumulates energy transported during the flow of a write or read current and provides this energy for a new write or read process.
6.WO/2003/094257SILICON PARTICLES USED AS ADDITIVES FOR IMPROVING THE CHARGE CARRIER MOBILITY IN ORGANIC SEMICONDUCTORS
WO - 13.11.2003
Int.Class H01L 51/30
HELECTRICITY
01ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30Selection of materials
 Appl.No PCT/DE2003/001210 Applicant INFINEON TECHNOLOGIES AG Inventor HALIK, Marcus
The invention relates to a semiconductor device comprising a semiconductor section made of an organic semiconductor material. Semiconductor particles or semiconductor clusters are statistically distributed within the organic semiconductor material. The semiconductor particles and/or semiconductor clusters can also be linked by linker molecules. The electrical properties, for example, of a field effect transistor comprising an aforementioned semiconductor section can be improved by adding semiconductor particles to the organic semiconductor material.
7.WO/2003/049120MAGNETORESISTIVE MEMORY CELL COMPRISING A DYNAMIC REFERENCE LAYER
WO - 12.06.2003
Int.Class G11C 11/15
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
14using thin-film elements
15using multiple magnetic layers
 Appl.No PCT/DE2002/004323 Applicant INFINEON TECHNOLOGIES AG Inventor BANGERT, Joachim
The invention relates to a system for increasing the relative resistance difference of a magnetoresistive memory cell (17) that comprises one memory layer (1) and one reference layer (3) each on both sides of a tunnel barrier (2). Said reference layer (3) is configured as a soft-magnetic layer and the magnetization thereof which can be influenced by write processes is rectified by a reference support field or a reference magnetization flux (11).
8.WO/1999/029860CADHERIN-LIKE POLYPEPTIDES, METHODS AND COMPOSITIONS RELATED THERETO
WO - 17.06.1999
Int.Class A01K 67/027
AHUMAN NECESSITIES
01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
KANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
67Rearing or breeding animals, not otherwise provided for; New or modified breeds of animals
027New or modified breeds of vertebrates
 Appl.No PCT/US1998/009151 Applicant ONTOGENY, INC. Inventor ISRAEL, David
The present invention concerns the discovery of a new family of cadherin-related genes, refered to herein as 'ontherins'. As described herein, the vertebrate ontherin proteins exhibit spatially restricted expression domains indicative of important roles in tissue homeostasis.
9.WO/1993/003960BLADE PITCH CHANGE CONTROL SYSTEM
WO - 04.03.1993
Int.Class B64C 11/38
BPERFORMING OPERATIONS; TRANSPORTING
64AIRCRAFT; AVIATION; COSMONAUTICS
CAEROPLANES; HELICOPTERS
11Propellers, e.g. of ducted type; Features common to propellers and rotors for rotorcraft
30Blade pitch-changing mechanisms
38fluid, e.g. hydraulic
 Appl.No PCT/US1992/006687 Applicant UNITED TECHNOLOGIES CORPORATION Inventor LAMPETER, Robert, J.
A pitch change actuation system is disclosed for adjusting the pitch of a variable pitch propeller blade (120) operatively connected for pitch change to a pitch change actuator piston (140). A pitch change control system (10) is operatively connected to the pitch change actuator piston (140) for selectively pressuring the pitch change actuator piston to effectuate a desired change in the pitch of the propeller blades (120). The pitch change control system (10) comprises a primary electrohydraulic valve (30), a protection valve (60), an electronic controller (20) and a protection solenoid (50). During normal operation, the primary electrohydraulic valve (30) is modulated under control of the electronic controller (20) to effect pitch change. In the event of failure of the electronic controller (20), the protection solenoid (50) is operative to activate the protection valve (60) to assume pitch change authority over the primary electrohydraulic valve (30) thereby providing emergency feathering capability, overspeed protection, low pitch stop limit protection, and in place pitchlock despite failure of the electronic controller.
10.WO/1994/007195FAST RESPONSE CURRENT REGULATOR FOR DC POWER SUPPLY
WO - 31.03.1994
Int.Class G05F 1/575
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
1Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
10Regulating voltage or current
46wherein the variable actually regulated by the final control device is DC
56using semiconductor devices in series with the load as final control devices
575characterised by the feedback circuit
 Appl.No PCT/US1993/007991 Applicant HYBRICON CORPORATION Inventor HAYWARD, C., Michael
A current regulating, transconductance amplifier (22) is connected to the load capacitor (EC1) of a backplane system. The load capacitor (EC1) is connected close to the load inside the feedback loop of the regulating amplifier (22). The frequency response shaping networks of the amplifier (22) are designed to include the pole and zero, contributed by this capacitor (EC1) to meet the criteria for fast settling of a current step at the load. At least in the location of the load capacitor (EC1) and the current feedback paths between each sense point and the transconductance amplifier (22) of the regulator the dielectric thickness of the dielectric material is made as thin as possible, consistent with manufacturability and voltage breakdown (currently on the order of seven mils thick), and the current paths between the transconductance amplifier (22) and each of the sense points (for detecting changes in load current) are made parallel to one another on opposite sides of the dielectric material so that the current in the two paths follow equal and opposite parallel directions. This results in the interaction of the electromagnetic fields created by the two currents drawn at the sense points so that they cancel one another so as to reduce the parasitic impedance of these current paths.
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