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Results 1-2 of 2 for Criteria:ALLNUM:JP2000000146 Office(s):all Language:en Stemming: false
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Analysis
List Length
TitleCtrPubDate
Appl.NoApplicantInventorInt.Class
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
JP18.07.2000
2000000146SAMSUNG ELECTRONICS CO LTDKIN TAIKUN
H01L 21/3205
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method for reducing contact resistance between a bit line and a word line.

SOLUTION: A semiconductor device includes a first conductive wiring formed on a semiconductor substrate 100, an insulating layer 110 having a first contact hole 112a for exposing the first conductive wiring and formed on the first conductive wiring and the semiconductor substrate 100, and a second conductive wiring on the insulating layer 110 with the first contact hole 112a. The second conductive wiring has a laminated structure made up of the polysilicon layer 114 and a silicide layer. A polysilicon layer 114 of the second conductive wiring is extended from a sidewall of the first contact hole 112a to an upper part of the insulating layer 110 in a way that the first conductive wiring is exposed. The silicide layer of the second conductive wiring is formed directly in a contacted state with the exposed first conductive wiring.

COPYRIGHT: (C)2000,JPO


BATTERY PACK AND POWER TOOL USING THE SAME
WO11.01.2001
PCT/JP2000/000146MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.DANSUI, Yoshitaka
H01M 2/10
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
M
PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
2
Constructional details, or processes of manufacture, of the non-active parts
10
Mountings; Suspension devices; Shock absorbers; Transport or carrying devices; Holders
Temperature rise of secondary battery during charging and discharging is suppressed. As a result, deterioration of discharge capability of a battery pack is prevented and a power tool capable of maintaining an excellent driving force continuously is obtained. The constitution includes a plurality of batteries stacked up, a case, a heat collector disposed in the center of the plurality of batteries, a heat radiator placed at one side of the case, and a first heat transfer unit placed for connecting the heat collector and heat radiator. The power tool includes a housing having a junction, a power unit placed in said housing, a battery pack connected at the junction, and an external heat collecting plate contacting with both junction and battery pack, and disposed between the junction and the battery pack.

Results 1-2 of 2 for Criteria:ALLNUM:JP2000000146 Office(s):all Language:en Stemming: false
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