Chat
Feedback
Settings

Settings

Goto Application

2 results
Offices all Languages en Stemming true Single Family Member false Include NPL false
RSS feed can only be generated if you have a WIPO account

Save query

A private query is only visible to you when you are logged-in and can not be used in RSS feeds

Query Tree

Refine Options

Offices
All
Specify the language of your search keywords
Stemming reduces inflected words to their stem or root form.
For example the words fishing, fished,fish, and fisher are reduced to the root word,fish,
so a search for fisher returns all the different variations
Returns only one member of a family of patents
Include Non-Patent literature in results

Full Query

(NPCC:SY AND CTR:WO)

Side-by-side view shortcuts

General
Go to Search input
CTRL + SHIFT +
Go to Results (selected record)
CTRL + SHIFT +
Go to Detail (selected tab)
CTRL + SHIFT +
Go to Next page
CTRL +
Go to Previous page
CTRL +
Results (First, do 'Go to Results')
Go to Next record / image
/
Go to Previous record / image
/
Scroll Up
Page Up
Scroll Down
Page Down
Scroll to Top
CTRL + Home
Scroll to Bottom
CTRL + End
Detail (First, do 'Go to Detail')
Go to Next tab
Go to Previous tab

Analysis

1 / 1
1.WO/2002/003517III GROUP NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT
WO - 10.01.2002
Int.Class H01L 21/205
HELECTRICITY
01ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
 Appl.No PCT/JP2001/005769 Applicant TOYODA GOSEI CO., LTD. Inventor WATANABE, Hiroshi
A III Group compound semiconductor light emitting element which emits a light of a wave length of 360 to 550 nm and has a light emitting layer containing portions comprising AlGaN layers and, sandwiched between them, an InGaN layer. The output of the light emitting element is improved by controlling the film thickness, growth rate and growth temperature for the InGaN layer as a well layer and the film thickness of the AlGaN layer so as to optimize them.
2.WO/2002/002661GRAFT COPOLYMER MIXTURE WITH IMPROVED PROPERTIES AND THE USE THEREOF AS AN ADHESION PROMOTER
WO - 10.01.2002
Int.Class B32B 27/30
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
27Layered products essentially comprising synthetic resin
30comprising vinyl resin; comprising acrylic resin
 Appl.No PCT/EP2001/007412 Applicant BASELL POLYOLEFINE GMBH Inventor VOGT, Heinz
The invention relates to a graft copolymer mixture containing the following components: a) between 10 and 50 % by weight, in relation to the mixture, of an ethylene-acrylic acid copolymer and/or an ethylene-acrylic acid-acrylic ester terpolymer; b) between 50 and 90 % by weight, in relation to the mixture, of an ethylene-α-olefin copolymer; and c) ethylenically unsaturated dicarboxylic acids and/or dicarboxylic acid anhydrides, said ethylenically unsaturated dicarboxylic acids and/or dicarboxylic acid anhydrides in (c) being grafted onto (a) and (b).
# -