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1 / 51,757
1.WO/1993/001545HIGH-PERFORMANCE RISC MICROPROCESSOR ARCHITECTURE
WO - 21.01.1993
Int.Class G06F 9/30
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
9
Arrangements for programme control, e.g. control unit
06
using stored programme, i.e. using internal store of processing equipment to receive and retain programme
30
Arrangements for executing machine- instructions, e.g. instruction decode
 Appl.No PCT/JP1992/000868 Applicant SEIKO EPSON CORPORATION Inventor NGUYEN, Le Trong
The high-performance, RISC core based microprocessor architecture permits concurrent execution of instructions obtained from memory through an instruction prefetch unit having multiple prefetch paths allowing for the main program instruction stream, a target conditional branch instruction stream and a procedural instruction stream. The target conditional branch prefetch path allows both possible instruction streams for a conditional branch instruction to be prefetched. The procedural instruction prefetch path allows a supplementary instruction stream to be accessed without clearing the main or target prefetch buffers. Each instruction set includes a plurality of fixed length instructions. An instruction FIFO is provided for buffering instruction sets in a plurality of instruction set buffers including a first buffer and a second buffer. An instruction execution unit including a register file and a plurality of functional units is provided with an instruction control unit capable of examining the instruction sets within the first and second buffers and scheduling any of the instructions for execution by available functional units. Multiple data paths between the functional units and the register file allow multiple independent accesses to the register file by the functional units as necessary for the execution of the respective instructions.
2.WO/2012/005541PORTABLE DISPLAY DEVICE
WO - 12.01.2012
Int.Class G06F 3/14
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
3
Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
14
Digital output to display device
 Appl.No PCT/KR2011/005017 Applicant KIM, Si-Han Inventor KIM, Si-Han
The present invention relates to a portable display device which includes at least two panel housings, and the panel housings are provided with respective displays, such that the displays are interconnected to form a single screen when the panel housings are unfolded. The entire screen of the display device can be displayed as being divided in a vertical or horizontal direction by the first display and the second display. The first display and the second display contact each other. The portable display device includes a first input device corresponding to the information outputted on the first display and a second input device corresponding to the information outputted on the second display. The first input device and the second input device also contact each other, such that the two input devices can be used as a single input device.
3.WO/2001/047294METHOD AND APPARATUS FOR A SPECTRALLY COMPLIANT CELLULAR COMMUNICATION SYSTEM
WO - 28.06.2001
Int.Class H04W 72/04
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
W
WIRELESS COMMUNICATION NETWORKS
72
Local resource management, e.g. selection or allocation of wireless resources or wireless traffic scheduling
04
Wireless resource allocation
 Appl.No PCT/US2000/034353 Applicant TANTIVY COMMUNICATIONS, INC. Inventor AMALFITANO, Carlo
A system for wireless data transmission that uses a channel bandwidth, channel separation, and radio frequency power spectrum which is compatible with existing deployments of wireless voice services. The transmitted waveforms are thus compatible with existing cellular networks. However, the time domain digital coding, modulation, and power control schemes are optimized for data transmission. Existing cellular network sites can thus be used to provide a high speed service optimized for wireless data traffic without the need for new radio frequency planning, and without interfering with existing voice service deployments.
4.WO/2011/145666PULSE OUTPUT CIRCUIT, SHIFT REGISTER, AND DISPLAY DEVICE
WO - 24.11.2011
Int.Class H03K 19/0175
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
19
Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
0175
Coupling arrangements; Interface arrangements
 Appl.No PCT/JP2011/061465 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor AMANO, Seiko
In a pulse output circuit in a shift register, a power source line which is connected to a transistor in an output portion connected to a pulse output circuit at the next stage is set to a low-potential drive voltage, and a power source line which is connected to a transistor in an output portion connected to a scan signal line is set to a variable potential drive voltage. The variable potential drive voltage is the low-potential drive voltage in a normal mode, and can be either a high-potential drive voltage or the low-potential drive voltage in a bath mode. In the batch mode, display scan signals can be output to a plurality of scan signal lines at the same timing in a batch.
5.WO/2010/058746SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
WO - 27.05.2010
Int.Class H01L 29/786
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
 Appl.No PCT/JP2009/069407 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor MIYAIRI, Hidekazu
As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.
6.WO/2011/004755SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
WO - 13.01.2011
Int.Class H01L 21/336
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
 Appl.No PCT/JP2010/061221 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor YAMAZAKI, Shunpei
It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.
7.WO/2010/004944LIGHT-EMITTING DEVICE AND ELECTRONIC DEVICE USING THE SAME
WO - 14.01.2010
Int.Class H05B 33/12
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
 Appl.No PCT/JP2009/062253 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor SEO, Satoshi
A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; and a white-emissive light-emitting element formed over and being in contact with the thin film transistor.
8.WO/2011/058866SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
WO - 19.05.2011
Int.Class H01L 29/786
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
 Appl.No PCT/JP2010/068795 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor YAMAZAKI, Shunpei
An object is to provide a semiconductor device with a novel structure and favorable characteristics. A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.
9.WO/2011/033915SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
WO - 24.03.2011
Int.Class H01L 29/786
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
 Appl.No PCT/JP2010/064543 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor YAMAZAKI, Shunpei
It is an object to provide a semiconductor device with less power consumption as a semiconductor device including a thin film transistor using an oxide semiconductor layer. It is an object to provide a semiconductor device with high reliability as a semiconductor device including a thin film transistor using an oxide semiconductor layer. In the semiconductor device, a gate electrode layer (a gate wiring layer) intersects with a wiring layer which is electrically connected to a source electrode layer or a drain electrode layer with an insulating layer which covers the oxide semiconductor layer of the thin film transistor and a gate insulating layer interposed therebetween. Accordingly, the parasitic capacitance formed by a stacked-layer structure of the gate electrode layer, the gate insulating layer, and the source or drain electrode layer can be reduced, so that low power consumption of the semiconductor device can be realized.
10.WO/2011/036999OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
WO - 31.03.2011
Int.Class H01L 29/786
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
 Appl.No PCT/JP2010/065190 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor YAMAZAKI, Shunpei
It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
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