Feedback
Settings

Settings

Goto Application

621,417 results
Offices all Languages en Stemming true Single Family Member false Include NPL false
RSS feed can only be generated if you have a WIPO account

Save query

A private query is only visible to you when you are logged-in and can not be used in RSS feeds

Query Tree

Refine Options

Offices
All
Specify the language of your search keywords
Stemming reduces inflected words to their stem or root form.
For example the words fishing, fished,fish, and fisher are reduced to the root word,fish,
so a search for fisher returns all the different variations
Returns only one member of a family of patents
Include Non-Patent literature in results

Full Query

(NPCC:KR AND CTR:WO)

Side-by-side view shortcuts

General
Go to Search input
CTRL + SHIFT +
Go to Results (selected record)
CTRL + SHIFT +
Go to Detail (selected tab)
CTRL + SHIFT +
Go to Next page
CTRL +
Go to Previous page
CTRL +
Results (First, do 'Go to Results')
Go to Next record / image
/
Go to Previous record / image
/
Scroll Up
Page Up
Scroll Down
Page Down
Scroll to Top
CTRL + Home
Scroll to Bottom
CTRL + End
Detail (First, do 'Go to Detail')
Go to Next tab
Go to Previous tab

Analysis

1 / 62,142
1.WO/2010/004944LIGHT-EMITTING DEVICE AND ELECTRONIC DEVICE USING THE SAME
WO - 14.01.2010
Int.Class H05B 33/12
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
33Electroluminescent light sources
12Light sources with substantially two-dimensional radiating surfaces
 Appl.No PCT/JP2009/062253 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor SEO, Satoshi
A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; and a white-emissive light-emitting element formed over and being in contact with the thin film transistor.
2.WO/2010/038820DISPLAY DEVICE
WO - 08.04.2010
Int.Class H01L 29/786
HELECTRICITY
01ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
 Appl.No PCT/JP2009/067119 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor YAMAZAKI, Shunpei
With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.
3.WO/2011/145666PULSE OUTPUT CIRCUIT, SHIFT REGISTER, AND DISPLAY DEVICE
WO - 24.11.2011
Int.Class H03K 19/0175
HELECTRICITY
03ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
19Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
0175Coupling arrangements; Interface arrangements
 Appl.No PCT/JP2011/061465 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor AMANO, Seiko
In a pulse output circuit in a shift register, a power source line which is connected to a transistor in an output portion connected to a pulse output circuit at the next stage is set to a low-potential drive voltage, and a power source line which is connected to a transistor in an output portion connected to a scan signal line is set to a variable potential drive voltage. The variable potential drive voltage is the low-potential drive voltage in a normal mode, and can be either a high-potential drive voltage or the low-potential drive voltage in a bath mode. In the batch mode, display scan signals can be output to a plurality of scan signal lines at the same timing in a batch.
4.WO/2011/034068LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
WO - 24.03.2011
Int.Class G09F 9/30
GPHYSICS
09EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30in which the desired character or characters are formed by combining individual elements
 Appl.No PCT/JP2010/065887 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor EGUCHI, Shingo
An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
5.WO/2013/077686PHASED INFORMATION PROVIDING SYSTEM AND METHOD
WO - 30.05.2013
Int.Class G06F 3/01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
3Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
01Input arrangements or combined input and output arrangements for interaction between user and computer
 Appl.No PCT/KR2012/010021 Applicant KIM, Si-Han Inventor KIM, Si-Han
The present invention relates to a terminal comprising a display, a central processing device and an input device. When an operation instruction for a phase of discriminating phases is input on the display, the input device outputs the operation instruction for the phase and the central processing device recognizes the phase of the operation instruction for the phase and outputs information relevant to the phase to the display. Thus, information relevant to the information being displayed on the current screen can be effectively displayed on the screen of the display even without executing several screen switching instructions.
6.WO/1993/001545HIGH-PERFORMANCE RISC MICROPROCESSOR ARCHITECTURE
WO - 21.01.1993
Int.Class G06F 9/30
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
9Arrangements for program control, e.g. control units
06using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
30Arrangements for executing machine instructions, e.g. instruction decode
 Appl.No PCT/JP1992/000868 Applicant SEIKO EPSON CORPORATION Inventor NGUYEN, Le Trong
The high-performance, RISC core based microprocessor architecture permits concurrent execution of instructions obtained from memory through an instruction prefetch unit having multiple prefetch paths allowing for the main program instruction stream, a target conditional branch instruction stream and a procedural instruction stream. The target conditional branch prefetch path allows both possible instruction streams for a conditional branch instruction to be prefetched. The procedural instruction prefetch path allows a supplementary instruction stream to be accessed without clearing the main or target prefetch buffers. Each instruction set includes a plurality of fixed length instructions. An instruction FIFO is provided for buffering instruction sets in a plurality of instruction set buffers including a first buffer and a second buffer. An instruction execution unit including a register file and a plurality of functional units is provided with an instruction control unit capable of examining the instruction sets within the first and second buffers and scheduling any of the instructions for execution by available functional units. Multiple data paths between the functional units and the register file allow multiple independent accesses to the register file by the functional units as necessary for the execution of the respective instructions.
7.WO/2011/055620SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
WO - 12.05.2011
Int.Class H01L 29/786
HELECTRICITY
01ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
 Appl.No PCT/JP2010/068105 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor YAMAZAKI, Shunpei
An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.
8.WO/2010/058746SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
WO - 27.05.2010
Int.Class H01L 29/786
HELECTRICITY
01ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
 Appl.No PCT/JP2009/069407 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor MIYAIRI, Hidekazu
As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.
9.WO/2011/046010LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE LIQUID CRYSTAL DISPLAY DEVICE
WO - 21.04.2011
Int.Class H01L 29/786
HELECTRICITY
01ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
 Appl.No PCT/JP2010/066627 Applicant SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Inventor YAMAZAKI, Shunpei
In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1 1014 /cm3.
10.WO/1996/015459MOUNTING SPRING ELEMENTS ON SEMICONDUCTOR DEVICES, AND WAFER-LEVEL TESTING METHODOLOGY
WO - 23.05.1996
Int.Class B23K 20/00
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
20Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
 Appl.No PCT/US1995/014885 Applicant FORMFACTOR, INC. Inventor KHANDROS, Igor, Y.
Resilient contact structures (430) are mounted directly to bond pads (410) on semiconductor dies (402a, 402b), prior to the dies (402a, 402b) being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies (402a, 402b) to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies (702, 704) with a circuit board (710) or the like having a plurality of terminals (712) disposed on a surface thereof. Subsequently, the semiconductor dies (402a, 402b) may be singulated from the semiconductor wafer, whereupon the same resilient contact structures (430) can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements (430) of the present invention as the resilient contact structures, burn-in (792) can be performed at temperatures of at least 150 °C, and can be completed in less than 60 minutes.
# -