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1. US20170255112 - METHOD AND APPARATUS TO DETERMINE A PATTERNING PROCESS PARAMETER

Office United States of America
Application Number 15445612
Application Date 28.02.2017
Publication Number 20170255112
Publication Date 07.09.2017
Publication Kind A1
IPC
G03F 9/00
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G01B 3/14
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
3Instruments as specified in the subgroups and characterised by the use of mechanical measuring means
14Templates for checking contours
CPC
G03F 9/7003
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
70for microlithography
7003Alignment type or strategy, e.g. leveling, global alignment
G01B 3/14
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
3Instruments as specified in the subgroups and characterised by the use of mechanical measuring means
14Templates for checking contours
Applicants ASML NETHERLANDS B.V.
Inventors Adriaan Johan VAN LEEST
Anagnostis TSIATMAS
Paul Christiaan HINNEN
Elliott Gerard McNAMARA
Alok VERMA
Thomas THEEUWES
Hugo Augustinus Joseph CRAMER
Maria Isabel DE LA FUENTE VALENTIN
Koen VAN WITTEVEEN
Martijn Maria ZAAL
Shu-jin WANG
Title
(EN) METHOD AND APPARATUS TO DETERMINE A PATTERNING PROCESS PARAMETER
Abstract
(EN)

A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.