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1. US20160359142 - Pixel structure, display device and manufacturing method of pixel structure

Office United States of America
Application Number 14912633
Application Date 21.07.2015
Publication Number 20160359142
Publication Date 08.12.2016
Grant Number 09685634
Grant Date 20.06.2017
Publication Kind B2
IPC
H01L 33/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 51/52
HELECTRICITY
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LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52Details of devices
H01L 27/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
CPC
H01L 51/5271
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5262Arrangements for extracting light from the device
5271Reflective means
H01L 27/32
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01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
H01L 27/3246
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
3246Pixel defining structures, e.g. banks
H01L 27/3283
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3281Passive matrix displays
3283including banks or shadow masks
H01L 51/001
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0008using physical deposition, e.g. sublimation, sputtering
001Vacuum deposition
H01L 51/0011
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0008using physical deposition, e.g. sublimation, sputtering
0011selective deposition, e.g. using a mask
Applicants BOE Technology Group Co., Ltd.
Inventors Lujiang Huangfu
Wenyu Ma
Xinwei Gao
Liangjian Li
Can Zhang
Agents Westman, Champlin & Koehler, P.A.
Priority Data 2015 1 0079940 13.02.2015 CN
Title
(EN) Pixel structure, display device and manufacturing method of pixel structure
Abstract
(EN)

A pixel structure, a display device having the pixel structure and a manufacturing method of the pixel structure are disclosed. The pixel structure comprises: a first insulation layer; a luminescent unit disposed on the first insulation layer and comprising a first electrode layer, a luminescent layer and a second electrode layer; a pixel defining layer configured for defining a pixel aperture, in which the luminescent unit is disposed; and a reflective assembly disposed around the pixel defining layer so as to reflect light entering the pixel defining layer from the luminescent layer to exit from an exit surface of the pixel structure. The reflective assembly is provided to reflect the light entering the pixel defining layer from the luminescent layer, so as to exit from the exit surface of the pixel structure. As a result, the light beams entering the pixel defining layer may be converted into effective beams for the pixel structure, thereby improving the display effect and reducing light dissipation.

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