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1. (US20160163734) Three-dimensional nonvolatile memory device, semiconductor system including the same, and method of manufacturing the same

Office : United States of America
Application Number: 15016425 Application Date: 05.02.2016
Publication Number: 20160163734 Publication Date: 09.06.2016
Grant Number: 09520409 Grant Date: 13.12.2016
Publication Kind : B2
IPC:
H01L 21/76
H01L 27/115
G11C 16/06
H01L 21/768
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
76
Making of isolation regions between components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants: SK hynix Inc.
Inventors: Tae Kyung Kim
Dae Sung Eom
Agents: William Park & Associates Ltd.
Priority Data: 10-2014-0062422 23.05.2014 KR
Title: (EN) Three-dimensional nonvolatile memory device, semiconductor system including the same, and method of manufacturing the same
Abstract: front page image
(EN)

A three-dimensional nonvolatile memory device includes a first vertical channel layer and a second vertical channel layer extending from a substrate, a plurality of memory cells, first selection transistors and second selection transistors spaced apart from each other along the first vertical channel layer and the second vertical channel layer, a pad, a contact plug and a bit line in a stacked configuration over the first vertical channel layer, and a common source line formed over the second vertical channel layer.


Also published as:
US20150340370CN105097817