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1. (US20150340370) Three-dimensional nonvolatile memory device, semiconductor system including the same, and method of manufacturing the same

Office : United States of America
Application Number: 14502776 Application Date: 30.09.2014
Publication Number: 20150340370 Publication Date: 26.11.2015
Grant Number: 09287286 Grant Date: 15.03.2016
Publication Kind : B2
IPC:
H01L 29/792
H01L 27/115
G11C 16/06
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
792
with charge trapping gate insulator, e.g. MNOS-memory transistor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
CPC:
H01L 27/1157
H01L 27/11582
H01L 27/11563
H01L 27/11573
G11C 16/06
H01L 21/76897
H01L 27/11578
Applicants: SK hynix Inc.
Inventors: Tae Kyung Kim
Dae Sung Eom
Agents: William Park & Associates Ltd.
Priority Data: 10-2014-0062422 23.05.2014 KR
Title: (EN) Three-dimensional nonvolatile memory device, semiconductor system including the same, and method of manufacturing the same
Abstract: front page image
(EN)

A three-dimensional nonvolatile memory device includes a first vertical channel layer and a second vertical channel layer extending from a substrate, a plurality of memory cells, first selection transistors and second selection transistors spaced apart from each other along the first vertical channel layer and the second vertical channel layer, a pad, a contact plug and a bit line in a stacked configuration over the first vertical channel layer, and a common source line formed over the second vertical channel layer.


Also published as:
CN105097817US20160163734