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1. US20150287912 - Magnetoresistive random access memory device and method of manufacturing the same

Office United States of America
Application Number 14612323
Application Date 03.02.2015
Publication Number 20150287912
Publication Date 08.10.2015
Grant Number 09735349
Grant Date 15.08.2017
Publication Kind B2
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
22
including components using galvano-magnetic effects, e.g. Hall effect; using similar magnetic field effects
H01L 43/08
H01L 43/12
H01L 27/22
CPC
H01L 43/12
G11C 11/161
H01L 27/228
H01L 43/08
Applicants SAMSUNG ELECTRONICS CO., LTD.
Inventors Jong-Chul Park
Byoung-Jae Bae
Shin-Jae Kang
Young-Seok Choi
Agents Lee & Morse, P.C.
Priority Data 10-2014-0040267 04.04.2014 KR
Title
(EN) Magnetoresistive random access memory device and method of manufacturing the same
Abstract
(EN)

In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An upper portion of the preliminary first free layer pattern is removed to form a first free layer pattern. A second free layer and a tunnel barrier layer are sequentially formed on the first free layer pattern. The second free layer is partially oxidized to form a second free layer pattern. A fixed layer structure is formed on the tunnel barrier layer.

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