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1. US20150078098 - NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF

Office United States of America
Application Number 14302087
Application Date 11.06.2014
Publication Number 20150078098
Publication Date 19.03.2015
Publication Kind A1
IPC
G11C 16/10
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
10Programming or data input circuits
CPC
G11C 16/10
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
10Programming or data input circuits
Applicants DongHun KWAK
Kitae PARK
Inventors DongHun KWAK
Kitae PARK
Title
(EN) NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF
Abstract
(EN)

According to example embodiments of inventive concepts, a nonvolatile memory device includes at least two strings that are vertically stacked on a substrate and share one bit line. A program method of the nonvolatile memory device includes setting a pre-charge condition on the basis of a disturb environment between the at least two cell strings, pre-charging or not pre-charging an unselected cell string among the at least two cell strings in response to the pre-charge condition and programming memory cells in a selected cell string among the at least two cell strings.

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