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1. (US20130263900) Wet processing apparatuses

Office : United States of America
Application Number: 13911774 Application Date: 06.06.2013
Publication Number: 20130263900 Publication Date: 10.10.2013
Grant Number: 08871032 Grant Date: 28.10.2014
Publication Kind : B2
IPC:
B08B 3/00
H01L 21/67
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3
Cleaning by methods involving the use or presence of liquid or steam
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
CPC:
H01L 21/67023
H01L 21/67057
Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventors: Tang Kuang-Nian
Fan Yang-Kai
Su Yu-Sheng
Chiang Ming-Tsao
Shih Yu-Cheng
Agents: Duane Morris LLP
Priority Data:
Title: (EN) Wet processing apparatuses
Abstract: front page image
(EN)

A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.