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1. US20100301480 - Semiconductor device having a conductive structure including oxide and non oxide portions

Office United States of America
Application Number 12787056
Application Date 25.05.2010
Publication Number 20100301480
Publication Date 02.12.2010
Grant Number 08575753
Grant Date 05.11.2013
Publication Kind B2
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
H01L 29/40
Applicants Choi Suk-hun
Samsung Electronics Co., Ltd.
Bae Ki-ho
Hong Yi-koan
Kim Kyung-hyun
Kim Tae-hyun
Nam Kyung-tae
Jeong Jun-ho
Inventors Choi Suk-hun
Bae Ki-ho
Hong Yi-koan
Kim Kyung-hyun
Kim Tae-hyun
Nam Kyung-tae
Jeong Jun-ho
Agents F. Chau & Associates, LLC
Priority Data 10-2009-0046383 27.05.2009 KR
10-2009-0110694 17.11.2009 KR
Title
(EN) Semiconductor device having a conductive structure including oxide and non oxide portions
Abstract
(EN)

A semiconductor device includes an interlayer insulating layer disposed on a substrate, the interlayer insulating layer comprising an opening exposing the substrate, a barrier layer pattern disposed within the opening, and a conductive pattern disposed on the barrier layer pattern, the conductive pattern having an oxidized portion extending out of the opening and a non-oxidized portion within the opening, wherein a width of the conductive pattern is determined by a thickness of the barrier layer pattern.