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1. (US20060197129) Buried and bulk channel finFET and method of making the same

Office : United States of America
Application Number: 11073330 Application Date: 03.03.2005
Publication Number: 20060197129 Publication Date: 07.09.2006
Publication Kind : A1
IPC:
H01L 29/66
H01L 29/94
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92
Capacitors with potential-jump barrier or surface barrier
94
Metal-insulator-semiconductors, e.g. MOS
Applicants: TriQuint Semiconductor, Inc.
Inventors: Wohlmuth Walter A.
Agents: Mr. Joseph Pugh;TriQuint Semiconductor
Priority Data:
Title: (EN) Buried and bulk channel finFET and method of making the same
Abstract: front page image
(EN)

One embodiment of a fin-field effect transistor includes a material stack including a non-inverting su surface channel, a fin of semiconductor material positioned on the material stack, the fin including first and second opposing side surfaces, and a gate electrode positioned on the first and second opposing side surfaces of the fin.