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1. US20030170985 - Etching methods for a magnetic memory cell stack

Office United States of America
Application Number 10092456
Application Date 06.03.2002
Publication Number 20030170985
Publication Date 11.09.2003
Grant Number 6821907
Grant Date 23.11.2004
Publication Kind B2
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
46
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/36-H01L21/428142
461
to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
F
MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
41
Apparatus or processes specially adapted for manufacturing or assembling the devices covered by this subclass
14
for applying magnetic films to substrates
30
for applying nanostructures, e.g. by molecular beam epitaxy (MBE)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/461
H01F 41/30
H01L 43/12
CPC
B82Y 25/00
B82Y 40/00
H01F 41/308
H01L 43/12
Applicants APPLIED MATERIALS INC
JIN GUANGXIANG
CHEN XIAOYI
Inventors Hwang, Jeng H.
Jin, Guangxiang
Chen, Xiaoyi
Agents Moser, Patterson & Sheridan, L.L.P.
Bach, Joseph
Title
(EN) Etching methods for a magnetic memory cell stack
Abstract
(EN)

A method and apparatus for etching a magnetic memory cell stack are described. More particularly, HCl is used as a main etchant gas for etching a magnetic memory cell stack. HCl is used in part to reduce corrosion and improve selectivity. Additionally, use of an amorphous carbon or hydrocarbon based polymer resin for a hard mask is described, as well as a post-etch passivation with a water rinse, a water vapor plasma treatment or an ammonia plasma treatment. Moreover, in an embodiment, a diffusion barrier layer dispose most of the magnetic memory cell stack is etched with hydrogen and fluorine containing gas in a separate process chambers.