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1. KR1020170000045 - SEMICONDUCTOR LIGHT EMITTING DEVICE

Office Republic of Korea
Application Number 1020150088594
Application Date 22.06.2015
Publication Number 1020170000045
Publication Date 02.01.2017
Publication Kind A
IPC
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
Applicants 삼성전자주식회사
Inventors 김종학
사공탄
심은덕
이정욱
임진영
김병균
Agents 특허법인씨엔에스
Title
(EN) SEMICONDUCTOR LIGHT EMITTING DEVICE
(KO) 반도체 발광소자
Abstract
(EN)
A semiconductor light emitting device according to an embodiment of the present invention includes a substrate, and convex parts each of which protrudes from the substrate and includes a first layer made of a material different from that of the substrate and a second layer made of a material different from the substrate on the first layer. Here, the height of the second layer may be higher than the height of the first layer. The height of the first layer may be 240 to 380 nm. COPYRIGHT KIPO 2017

(KO)
본 발명의 일 실시예에 따른 반도체 발광소자는, 기판, 및 기판으로부터 돌출되며, 기판과 다른 물질로 이루어진 제1층과 상기 제1층 상에 기판과 다른 물질로 이루어진 제2층을 포함하는 볼록부들을 포함한다. 여기서, 제2층의 높이는 제1층의 높이보다 높을 수 있고, 제1층의 높이는 240nm 내지 380nm 일 수 있다.