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1. KR1020160056525 - LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

Office Republic of Korea
Application Number 1020140156840
Application Date 12.11.2014
Publication Number 1020160056525
Publication Date 20.05.2016
Publication Kind A
IPC
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
12with a stress relaxation structure, e.g. buffer layer
CPC
H01L 33/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
12with a stress relaxation structure, e.g. buffer layer
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
Applicants 서울바이오시스 주식회사
SEOUL VIOSYS CO., LTD.SEOUL VIOSYS CO., LTD.
Inventors JUNG, JUNG WHANJUNG, JUNG WHAN
KIM, KYUNG HAEKIM, KYUNG HAE
KWAK, WOO CHULKWAK, WOO CHUL
정정환
JANG, SAM SEOKJANG, SAM SEOK
김경해
곽우철
장삼석
Agents 특허법인에이아이피
Title
(EN) LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
(KO) 발광 소자 및 그 제조 방법
Abstract
(EN)
Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises: a patterned sapphire substrate (PSS) including a plurality of concave units and convex units on an upper surface; a buffer layer including a concave unit buffer layer placed on the concave unit and a convex unit buffer layer placed on a side surface of the convex unit and dispersed as a form of a plurality of islands; a lower nitride layer placed on the buffer layer and the PPS and covering the convex unit; a cavity arranged on an interface between the side surface of the convex unit and the lower nitride layer; a first conductive semiconductor layer arranged on the lower nitride layer; a second conductive semiconductor layer arranged on the first conductive semiconductor layer; and an active layer arranged between the first and second conductive semiconductor layers. According to the present invention, a crystalline property of a semiconductor device may be improved, and light emitting efficiency can be enhanced. COPYRIGHT KIPO 2016

(KO)
발광 소자 및 그 제조 방법이 개시된다. 상기 발광 소자는, 상면에 복수의 오목부 및 돌출부를 포함하는 패터닝된 사파이어 기판(PSS); 오목부 상에 위치하는 오목부 버퍼층, 및 돌출부의 측면 상에 위치하며, 복수의 아일랜드 형태로 분산되어 배치된 돌출부 버퍼층을 포함하는 버퍼층; 버퍼층 및 상기 PSS 상에 위치하며, 돌출부를 덮는 하부 질화물층; 돌출부의 측면과 상기 하부 질화물층 간의 계면에 위치하는 공동; 하부 질화물층 상에 위치하는 제1 도전형 반도체층; 제1 도전형 반도체층 상에 위치하는 제2 도전형 반도체층; 및 제1 및 제2 도전형 반도체층의 사이에 위치하는 활성층을 포함한다.

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