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1. KR1020150035211 - LIGHT EMITTING DEVICE HAVING WIDE BEAM ANGLE AND UNIFORM ILLUMINATION, AND METHOD OF FABRICATING SAME

Office Republic of Korea
Application Number 1020130115500
Application Date 27.09.2013
Publication Number 1020150035211
Publication Date 06.04.2015
Publication Kind A
IPC
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/48
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
CPC
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/44
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/405
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
405Reflective materials
H01L 27/156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
156two-dimensional arrays
H01L 2933/0008
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
Applicants 서울바이오시스 주식회사
SEOUL VIOSYS CO., LTD.SEOUL VIOSYS CO., LTD.
Inventors JANG, JONG MINJANG, JONG MIN
LEE, JOON SUPLEE, JOON SUP
SUH, DAE WOONGSUH, DAE WOONG
장종민
ROH, WON YOUNGROH, WON YOUNG
이준섭
KIM, HYUN AKIM, HYUN A
서대웅
CHAE, JONG HYEONCHAE, JONG HYEON
노원영
BAE, SEON MINBAE, SEON MIN
김현아
채종현
배선민
Agents 특허법인에이아이피
Title
(EN) LIGHT EMITTING DEVICE HAVING WIDE BEAM ANGLE AND UNIFORM ILLUMINATION, AND METHOD OF FABRICATING SAME
(KO) 넓은 지향각 및 균일한 조도를 갖는 발광 소자 및 그 제조 방법
Abstract
(EN)
Disclosed are a light emitting device having wide beam angle and uniform illumination, and a method of fabricating the same. The light emitting device includes: a light emitting structure and a transparent substrate located on the light emitting structure. The transparent substrate includes at least two different embossed patterns which include a first embossed pattern and a second embossed pattern located on its upper surface. The protrusion part of the first embossed pattern is larger than that of the second embossed pattern. The first embossed pattern is located in the center region of the upper side of the transparent substrate. The second embossed pattern is located in the edge region of the upper side of the transparent substrate. Thereby, the light emitting device has a wide beam angle and uniform illumination according to a light emitting angle. COPYRIGHT KIPO 2015

(KO)
넓은 지향각 및 균일한 조도를 갖는 발광 소자 및 그 제조 방법이 개시된다. 상기 발광 소자는, 발광 구조체, 및 상기 발광 구조체 상에 위치하는 투명 기판을 포함하되, 상기 투명 기판은, 그 상면에 위치하며, 제1 요철 패턴 및 제2 요철 패턴을 포함하는 적어도 2 이상의 서로 다른 요철 패턴들을 포함하고, 상기 제1 요철 패턴의 돌출부는 상기 제2 요철 패턴의 돌출부보다 큰 크기를 갖고, 상기 제1 요철 패턴은 상기 투명 기판 상면의 중앙 영역에 위치하고, 상기 제2 요철 패턴은 상기 투명 기판 상면의 외곽 영역에 위치한다. 이에 따라, 상기 발광 소자는 넓은 지향각을 가짐과 아울러 발광 각에 따라 균일한 조도를 가질 수 있다.