Processing

Please wait...

Settings

Settings

Goto Application

1. KR1020150029315 - LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF

Office Republic of Korea
Application Number 1020130108326
Application Date 10.09.2013
Publication Number 1020150029315
Publication Date 18.03.2015
Publication Kind A
IPC
H01L 33/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/44
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
CPC
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/44
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01L 2933/0083
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0083Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
Applicants 서울바이오시스 주식회사
SEOUL VIOSYS CO., LTD.
Inventors CHAE, JONG HYEON
채종현
HAN, YU DAE
한유대
LEE, JOON SUP
이준섭
ROH, WON YOUNG
노원영
KANG, MIN WOO
강민우
SUH, DAE WOONG
서대웅
JANG, JONG MIN
장종민
KIM, HYUN A
김현아
Agents CHAE, JONG HYEON
HAN, YU DAE
특허법인에이아이피
LEE, JOON SUP
ROH, WON YOUNG
KANG, MIN WOO
SUH, DAE WOONG
JANG, JONG MIN
KIM, HYUN A
Title
(EN) LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF
(KO) 발광 다이오드 및 그것을 제조하는 방법
Abstract
(EN)
A disclosed light emitting diode comprises: a substrate; a semiconductor layer formed on one surface of the substrate; an anti-reflective element formed on the other surface of the substrate. The anti-reflective element includes a nanopattern. The present invention can ameliorate light extraction efficiency by reducing total reflection of light traveling toward air through the substrate from a semiconductor stacking unit as the anti-reflective element is disposed between the substrate and the air. Furthermore, each anti-reflective element can be formed in a Moth-eye pattern as formed in the nanopattern. Accordingly, the reflection generated at the interface between the substrate and the semiconductor layer. COPYRIGHT KIPO 2015

(KO)
개시된 발광 다이오드는 기판과, 기판의 일면 상에 형성된 반도체층 및 기판의 타면 상에 형성된 반사 방지 요소를 포함하고, 반사 방지 요소는 나노 패턴을 포함한다. 본 발명은 반사 방지 요소가 기판과 공기사이에 위치하여 반도체 적층부로부터 상기 기판을 통해서 공기로 진행하는 광의 전반사를 감소시켜 광 추출 효율을 개선할 수 있다. 더욱이, 반사 방지 요소는 나노 패턴으로 형성함으로써 반사 방지 요소 각각을 모스-아이(Moth-eye) 패턴으로 형성할 수 있으며, 따라서, 기판과 반도체층의 계면에서 발생되는 반사를 급격히 낮출 수 있다.