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1. KR1020110014977 - Cu-Ga 소결체 스퍼터링 타깃 및 동 타깃의 제조 방법

Office Republic of Korea
Application Number 1020107023228
Application Date 29.06.2010
Publication Number 1020110014977
Publication Date 14.02.2011
Grant Number 1012495660000
Grant Date 01.04.2013
Publication Kind B1
IPC
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
B22F 3/14
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
3Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor
12Both compacting and sintering
14simultaneously
C23C 14/14
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
14Metallic material, boron or silicon
Applicants 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤
Inventors 이키사와 마사카츠
다카미 히데오
다무라 도모야
Agents 특허법인코리아나
Priority Data JP-P-2009-174253 27.07.2009 JP
Title
(KO) Cu-Ga 소결체 스퍼터링 타깃 및 동 타깃의 제조 방법
Abstract
(KO)
(요약) Ga 농도가 20 ∼ 60 at%, 잔부가 Cu 및 불가피한 불순물인 Cu-Ga 합금 분말의 소결체로 이루어지고, 그 소결체의 상대밀도가 97 % 이상, 평균 결정 입경이 5 ∼ 30 ㎛ 이고, 또한 항절력이 150 ㎫ 이상인 것을 특징으로 하는 Cu-Ga 합금 소결체 스퍼터링 타깃. 조성 편석이 없고, 취성이 적은 Ga 농도가 25 ∼ 45 at% 의 고 Ga 농도 Cu-Ga 타깃 및 그 제조 방법을 제공할 수 있어, 타깃 제조 및 CIGS 계 태양 전지 제조의 수율이 향상되고, 제조 비용을 저감할 수 있기 때문에, 셀렌화법에 의한 CIGS 계 태양 전지의 제조용 재료로서 유용하다.