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1. KR1020110004362 - 열전기 적용을 위한 도핑된 주석 텔루라이드

Office Republic of Korea
Application Number 1020107019118
Application Date 05.02.2009
Publication Number 1020110004362
Publication Date 13.01.2011
Publication Kind A
IPC
C01B 19/00
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
19Selenium; Tellurium; Compounds thereof
H01L 35/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 23/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
38Cooling arrangements using the Peltier effect
H01L 35/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
C01B 19/002
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
19Selenium; Tellurium; Compounds thereof
002Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
C01B 19/007
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
19Selenium; Tellurium; Compounds thereof
007Tellurides or selenides of metals
C01P2006/40
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2006Physical properties of inorganic compounds
40Electric properties
H01L 23/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
38Cooling arrangements using the Peltier effect
H01L 35/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 35/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
Applicants 바스프 에스이
Inventors 하아쓰 프랑크
Agents 김성기
강승옥
Priority Data 08151149.5 07.02.2008 EP
Title
(KO) 열전기 적용을 위한 도핑된 주석 텔루라이드
Abstract
(KO)
p- 또는 n-전도성 반도체 재료는 하기 화학식 I의 화합물을 포함한다: [화학식 I] SnPbA ... A(TeSeSX) 상기 식에서, 0.05 < a < 1이고, n ≥ 1(여기서, n은 Sn 및 Pb와 상이한 화학 원소의 숫자임)이고, 각 경우 독립적으로, 1 ppm ≤ x1 ... xn ≤ 0.05이고, A ... A은 서로 상이하고 원소 Li, Na, K, Rb, Cs, Mg, Ca, Y, Ti, Zr, Hf, Nb, Ta, Cr, Mn, Fe, Cu, Ag, Au, Ga, In, Tl, Ge, Sb, Bi의 군 중에서 선택되고, X는 F, Cl, Br 또는 I이고, 0 ≤ p ≤ 1이고, 0 ≤ q ≤ 1이고, 0 ≤ r ≤ 0.01이고, -0.01 ≤ z ≤ 0.01이고, 이러한 조건에서, p + q + r ≤ 1이고 a + x1 + ... + xn ≤ 1이다. a 1-a-(x1 + ... + xn) 1 x1 n xn 1-p-q-r p q r 1+z 1 n