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1. JP2019079916 - BACK-CONTACT TYPE SOLAR BATTERY MODULE

Office Japan
Application Number 2017205339
Application Date 24.10.2017
Publication Number 2019079916
Publication Date 23.05.2019
Publication Kind A
IPC
H01L 31/0216
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
H01L 31/048
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
048Encapsulation of modules
H01L 31/055
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
055where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
CPC
Y02E 10/52
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
52PV systems with concentrators
Y02E 10/546
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
546Polycrystalline silicon PV cells
Applicants KANEKA CORP
株式会社カネカ
Inventors YOSHIDA WATARU
吉田 航
IRIE NOBORU
入江 暢
YOSHIKAWA KUNITA
吉河 訓太
Title
(EN) BACK-CONTACT TYPE SOLAR BATTERY MODULE
(JA) バックコンタクト型太陽電池モジュール
Abstract
(EN)

PROBLEM TO BE SOLVED: To provide a solar battery module of a back-contact type solar battery, which can ensure both of a conversion performance of photoelectric conversion in a solar battery module and UV light durability.

SOLUTION: A solar battery module 20 comprises an intrinsic semiconductor layer 12U formed by a hydrogenated amorphous silicon-based film layer, a low-reflection layer 16 composed of an insulative layer, and a light-receiving side sealant 21U which are disposed on one another on the side of a light-receiving face 11SU of a semiconductor substrate 11. The amount of a UV absorber to be added to a mass of the light-receiving side sealant 21U is less than 0.010 mass%. The hydrogenated amorphous silicon layer has a thickness Ta of 15 nm or more and 50 nm or less.

SELECTED DRAWING: Figure 1

COPYRIGHT: (C)2019,JPO&INPIT

(JA)


【課題】 太陽電池モジュールにおける光電変換の変換性能と紫外線耐久性とを同時に担保したバックコンタクト型太陽電池の太陽電池モジュールを提供する。
【解決手段】 太陽電池モジュール20では、半導体基板11の受光面11SU側に、水素化非晶質シリコン系薄膜層で形成される真性半導体層12U、絶縁層である低反射層16、および、受光側封止材21Uが重ねて配置される。そして、受光側封止材21Uの質量に対して添加される紫外線吸収剤が、0.010質量%未満であり、かつ、水素化アモルファスシリコン層の厚みTaが、15nm以上50nm以下である。
【選択図】 図1