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1. JP2018501404 - スパッタシステムに用いるための装置、アセンブリ、及びターゲットアセンブリにRF電力を供給する方法

Office Japan
Application Number 2017530151
Application Date 08.12.2015
Publication Number 2018501404
Publication Date 18.01.2018
Grant Number 6629857
Grant Date 13.12.2019
Publication Kind B2
IPC
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
CPC
H01J 37/32082
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
H01J 37/3405
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3402using supplementary magnetic fields
3405Magnetron sputtering
H01J 37/3444
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3411Constructional aspects of the reactor
3444Associated circuits
H01J 37/347
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3464Operating strategies
347Thickness uniformity of coated layers or desired profile of target erosion
H01J 37/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
H01J 37/3435
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3411Constructional aspects of the reactor
3435Target holders (includes backing plates and endblocks)
Applicants ソレラス・アドヴァンスト・コーティングス・ビーヴイビーエー
Inventors デ・ボスヘル,ウィルマート
ヴァン・デ・プッテ,イヴァン
Agents 奥山 尚一
有原 幸一
松島 鉄男
中村 綾子
森本 聡二
田中 祐
徳本 浩一
水島 亜希子
Priority Data 14196851 08.12.2014 EP
Title
(JA) スパッタシステムに用いるための装置、アセンブリ、及びターゲットアセンブリにRF電力を供給する方法
Abstract
(JA)

スパッタシステム(600)に用いるための装置(602)は、そのスパッタシステムのそれぞれ反対側に配置された少なくとも第1の端ブロック(631)及び第2の端ブロック(632)を備える。その装置は、少なくとも1つのターゲット管またはスパッタマグネトロンを備えるターゲットアセンブリが、第1及び第2の端ブロック(631、632)に装着されたときに、アセンブリの両側でRF電源により能動的に電力供給され得るように、かつ、ターゲットアセンブリが、装着されたときに、ターゲット管またはスパッタマグネトロンの両端で同時にRF電源により連続的に電力が能動的に電力供給されないように、適合される。該装置と、制御ユニットと、を備えるアセンブリ(601)であって、該制御ユニットは、ターゲットアセンブリが、装着されたときに、ターゲット管またはスパッタマグネトロンの両端で同時にRF電力により連続的に能動的に電力供給されないように、ターゲットアセンブリの両側でRF電力による電力供給を制御する、アセンブリ(601)、ならびにインピーダンス・ターゲットアセンブリにRF電力を適用する方法もまた提供される。
【選択図】図6