Processing

Please wait...

Settings

Settings

Goto Application

1. JP2011514666 - 熱電応用のためのドープテルル化スズを含む半導体材料

Office Japan
Application Number 2010545461
Application Date 05.02.2009
Publication Number 2011514666
Publication Date 06.05.2011
Grant Number 5468554
Grant Date 07.02.2014
Publication Kind B2
IPC
H01L 35/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 35/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H02N 11/00
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
11Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
CPC
C01B 19/002
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
19Selenium; Tellurium; Compounds thereof
002Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
C01B 19/007
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
19Selenium; Tellurium; Compounds thereof
007Tellurides or selenides of metals
C01P 2006/40
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2006Physical properties of inorganic compounds
40Electric properties
H01L 23/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
38Cooling arrangements using the Peltier effect
H01L 35/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 35/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
Applicants ビーエーエスエフ ソシエタス・ヨーロピア
Inventors ハース,フランク
Agents 江藤 聡明
Priority Data 08151149.5 07.02.2008 EP
Title
(JA) 熱電応用のためのドープテルル化スズを含む半導体材料
Abstract
(JA)

一般式(I)
SnaPb1-a(x1+...+xn)1x1...Anxn(Te1-p-q-rSepqr1+z (I)
[但し、式中、
0.05<a<1、
n≧1(但し、nはSn及びPbとは異なる化学元素の数である)、
いずれの場合も独立して、
1 ppm≦x1...xn≦0.05、
1...Anは互いに異なり、Li、Na、K、Rb、Cs、Mg、Ca、Y、Ti、Zr、Hf、Nb、Ta、Cr、Mn、Fe、Cu、Ag、Au、Ga、In、Tl、Ge、Sb、Biからなる群から選択され、
Xは、F、Cl、Br又はIであり、
p+q+r≦1、及びa+x1+...+xn≦1の条件において
0≦p≦1、
0≦q≦1、
0≦r≦0.01、
−0.01≦z≦0.01である]
で表される化合物を含むことを特徴とするp−又はn−導電性の半導体材料。
【選択図】図1