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1. (JP2004321971) CLEANING DEVICE AND BOARD TREATING APPARATUS

Office : Japan
Application Number: 2003121398 Application Date: 25.04.2003
Publication Number: 2004321971 Publication Date: 18.11.2004
Grant Number: 4291034 Grant Date: 08.07.2009
Publication Kind : B2
IPC:
B08B 3/4
B08B 3/2
B08B 3/8
B08B 3/10
B08B 5/2
H01L 21/0
H01L 21/304
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3
Cleaning by methods involving the use or presence of liquid or steam
04
Cleaning involving contact with liquid
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3
Cleaning by methods involving the use or presence of liquid or steam
02
Cleaning by the force of jets or sprays
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3
Cleaning by methods involving the use or presence of liquid or steam
04
Cleaning involving contact with liquid
08
the liquid having chemical or dissolving effect
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3
Cleaning by methods involving the use or presence of liquid or steam
04
Cleaning involving contact with liquid
10
with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity, by vibration
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
5
Cleaning by methods involving the use of air flow or gas flow
02
Cleaning by the force of jets, e.g. blowing-out cavities
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants: DAINIPPON SCREEN MFG CO LTD
大日本スクリーン製造株式会社; 京都府京都市上京区堀川通寺之内上る4丁目天神北町1番地の1
Inventors: YOKOMOTO TAKASHI
横元 隆
HIROE TOSHIRO
廣江 敏朗
HASEGAWA KOJI
長谷川 公二
Priority Data: 2003121398 25.04.2003 JP
Title: (EN) CLEANING DEVICE AND BOARD TREATING APPARATUS
(JA) 洗浄装置および基板処理装置
Abstract: front page image
(EN) PROBLEM TO BE SOLVED: To improve the throughput of a cleaning device for cleaning a chuck to reduce the amount of a consumed gas and improve a cleaning performance.

SOLUTION: The cleaning device WA comprises cleaning baths 10, jet nozzles 11, delivery nozzles 12, a liquid supply mechanism 13, and a gas supply mechanism 14. The liquid supply mechanism 13 has a supply tank 130, a heating device 131, and a liquid delivery mechanism 133. In the liquid supply mechanism 13, pure water of a room temperature supplied from the supply tank 131 is heated by the heating device 131 to produce warm water HLQ (with lowered electric resistance) which is heated above the room temperature. The warm water HLQ is then supplied to the cleaning baths 10 via the liquid delivery mechanism 133. A lifting mechanism lowers a transfer arm 20 to submerge the chuck 21 in the warm water HLQ to clean it.

COPYRIGHT: (C)2005,JPO&NCIPI
(JA)


【課題】チャックを洗浄する洗浄装置のスループットを向上させ、消費するガスの量を削減するとともに、洗浄性能の向上を図る。
【解決手段】洗浄装置WAに、洗浄槽10、噴射ノズル11、吐出ノズル12、液供給機構13、およびガス供給機構14を設ける。
液供給機構13は、供給タンク130、加熱装置131および配液機構133を有しており、供給タンク130から供給される室温の純水を加熱装置131において加熱し、室温以上に加熱された温水HLQ(電気抵抗が低下する)を生成する。
液供給機構13は、生成した温水HLQを配液機構133を介して洗浄槽10に供給する。
図示しない昇降機構が、搬送アーム20を降下させることによって、チャック21を温水HLQに浸し、これによりチャック21の洗浄を行う。
【選択図】 図2


Also published as:
US20040211449