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1. JP2004140064 - THERMOELEMENT AND ITS MANUFACTURING METHOD

Office Japan
Application Number 2002301534
Application Date 16.10.2002
Publication Number 2004140064
Publication Date 13.05.2004
Grant Number 4199513
Grant Date 10.10.2008
Publication Kind B2
IPC
H01L 35/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
32characterised by the structure or configuration of the cell or thermo-couple forming the device
H01L 35/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 35/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants CITIZEN WATCH CO LTD
シチズン時計株式会社
Inventors NAKAMURA TETSUHIRO
中村  哲浩
Agents 宮島 明
土屋 繁
Title
(EN) THERMOELEMENT AND ITS MANUFACTURING METHOD
(JA) 熱電素子の製造方法
Abstract
(EN)

PROBLEM TO BE SOLVED: To solve the problems wherein a conductive material is liable to separate from a thermoelectric semiconductor due to a thermal expansion coefficient difference between a heat dissipating board and a thermoelement because metal interconnect lines formed on the heat dissipating board are electrically connected to the thermoelectric semiconductor provided with a conductive material formed on its front surface with solder or a conductive adhesive agent in a thermoelement having a conventional structure, the thermoelement can not be set high enough in reliability and performance because an electrical connection is liable to be often disconnected in a heat cycle test, and the thermoelement is restrained from being reduced in size due to the fact that the thickness of the heat dissipating board causes increase in the thickness of the whole thermoelement.

SOLUTION: The p-type thermoelements and the n-type thermoelements are alternately arranged through the intermediary of an insulator. The thermoelements are electrically connected together with metal members and metal interconnect lines, the surfaces of the metal interconnect lines and the insulators are protected by an insulating layer containing thermally conductive particles and catalytic metal particles, and a metal layer is formed on the surface of the insulating layer.

COPYRIGHT: (C)2004,JPO

(JA)

【課題】従来の熱電素子の構造では、放熱板上に形成した金属配線と表面に導電材を設けた熱電半導体とをハンダや導電接着剤を用いて、電気的に接続しているため、放熱板と熱電素子との熱膨張係数差により、導電材と熱電半導体との間で剥離が発生する。電気的接続の断線は温度サイクル試験で顕著に現れ、信頼性の面でも十分な性能が得られていない。また、放熱板の厚みが熱電素子全体の厚みを増加させてしまうことになり、熱電素子を小型化する際の大きな問題点となっている。
【解決手段】本発明の熱電素子は、p型とn型の複数の熱電半導体を絶縁物を介して交互に配列し、各熱電半導体を金属部材および金属配線によって電気的に接続し、金属配線および絶縁物表面を熱伝導粒子と触媒金属粒子とを含有した絶縁層によって保護しており、絶縁層の表面に金属層が形成されている構造となっている。
【選択図】   図1