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1. EP3582491 - SOLID-STATE IMAGE PICKUP ELEMENT

Office European Patent Office
Application Number 18872485
Application Date 17.07.2018
Publication Number 3582491
Publication Date 18.12.2019
Publication Kind A4
IPC
H04N 5/3745
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
CPC
H01L 27/14607
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
14607Geometry of the photosensitive area
H01L 27/14634
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14634Assemblies, i.e. Hybrid structures
H04N 5/3745
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/37455
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
37455comprising A/D, V/T, V/F, I/T or I/F converters
H04N 5/36961
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
3696SSIS architecture characterized by non-identical, non-equidistant or non-planar pixel layout, sensor embedding other types of pixels not meant for producing an image signal, e.g. fovea sensors or display pixels
36961the other type of pixels are pixels specially adapted for focusing, e.g. phase difference pixel sets
H04N 5/379
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
379Details of the architecture or circuitry being divided to different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
Applicants SONY SEMICONDUCTOR SOLUTIONS CORP
Inventors NIWA ATSUMI
Designated States
Priority Data 2017209045 30.10.2017 JP
Title
(DE) FESTKÖRPERBILDAUFNAHMEELEMENT
(EN) SOLID-STATE IMAGE PICKUP ELEMENT
(FR) ÉLÉMENT DE CAPTURE D'IMAGE À SEMI-CONDUCTEURS
Abstract
(EN)
To a mounting area in a solid-state imaging device that detects an address event.The solid-state imaging device includes a light receiving chip and a detection chip. In the solid-state imaging device including the light receiving chip and the detection chip, the light receiving chip includes a photodiode that photoelectrically converts incident light and generates a photocurrent. In addition, in the solid-state imaging device, the detection chip quantizes a voltage signal corresponding to the photocurrent generated by the photodiode in the light receiving chip and outputs the voltage signal as a detection signal.

(FR)
La présente invention réduit une aire de montage dans un élément de capture d'image à semi-conducteurs qui détecte un événement d'adresse. Cet élément de capture d'image à semi-conducteurs est muni d'une puce de réception de lumière et d'une puce de détection. Dans l'élément de capture d'image à semi-conducteurs qui est muni de la puce de réception de lumière et de la puce de détection, la puce de réception de lumière est munie d'une photodiode qui génère un photocourant par conversion photoélectrique d'une lumière introduite. En outre, dans l'élément de capture d'image à semi-conducteurs, la puce de détection quantifie un signal de tension correspondant au photocourant qui a été généré par la photodiode dans la puce de réception de lumière, et délivre le signal en tant que signal de détection.