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1. EP3032822 - IMAGING DEVICE AND ELECTRONIC DEVICE

Office European Patent Office
Application Number 14834217
Application Date 22.07.2014
Publication Number 3032822
Publication Date 15.06.2016
Publication Kind B1
IPC
H04N 5/369
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
H03M 1/56
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
MCODING, DECODING OR CODE CONVERSION, IN GENERAL
1Analogue/digital conversion; Digital/analogue conversion
12Analogue/digital converters
50with intermediate conversion to time interval
56Input signal compared with linear ramp
H04N 5/374
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
H04N 5/378
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
378Readout circuits, e.g. correlated double sampling circuits, output amplifiers or A/D converters
CPC
H03M 1/56
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
MCODING; DECODING; CODE CONVERSION IN GENERAL
1Analogue/digital conversion; Digital/analogue conversion
12Analogue/digital converters
50with intermediate conversion to time interval
56Input signal compared with linear ramp
H04N 5/3698
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
3698Circuitry for controlling the generation or the management of the power supply
H04N 5/37455
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
37455comprising A/D, V/T, V/F, I/T or I/F converters
H04N 5/37457
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
37457comprising amplifiers shared between a plurality of pixels, e.g. at least one part of the amplifier has to be on the sensor array itself
H04N 5/378
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
378Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
H04N 5/379
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
379Details of the architecture or circuitry being divided to different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
Applicants SONY CORP
Inventors MABUCHI KEIJI
Designated States
Priority Data 2013162208 05.08.2013 JP
Title
(DE) BILDGEBUNGSVORRICHTUNG UND ELEKTRONISCHE VORRICHTUNG
(EN) IMAGING DEVICE AND ELECTRONIC DEVICE
(FR) DISPOSITIF D'IMAGERIE ET DISPOSITIF ÉLECTRONIQUE
Abstract
(EN)
The present technology relates to an imaging device that can reduce the size thereof, and to an electronic apparatus. An upper substrate and a lower substrate are stacked. A pixel and a comparing unit that compares the voltage of a signal from the pixel with the ramp voltage are provided on the upper substrate, the ramp voltage varying with time. A storage unit that stores a code value obtained at a time when a comparison result from the comparing unit is inverted is provided on the lower substrate. The comparing unit is formed with a transistor that receives the voltage of the signal from the pixel at the gate, receives the ramp voltage at the source, and outputs a drain voltage. Accordingly, the imaging device can be made smaller in size. The present technology can be applied to image sensors.

(FR)
La présente invention concerne un dispositif d'imagerie et un dispositif électronique qui permettent au dispositif d'imagerie d'être plus compact. Une plaque de base supérieure et une plaque de base inférieure sont superposées. Des pixels et une unité de comparaison qui compare la tension de signal en provenance des pixels et une tension en rampe à variation temporelle, sont agencés sur la plaque de base supérieure. Une unité de mémorisation, qui retient une valeur de code depuis le moment où des résultats de comparaison en provenance de l'unité de comparaison se sont inversés, est agencée sur la plaque de base inférieure. L'unité de comparaison reçoit une tension de signal de pixel au niveau de la grille et une tension en rampe au niveau de la source et comprend un transistor qui sort une tension de drain. En conséquence, le dispositif d'imagerie peut être rendu plus compact. Cette technologie peut s'appliquer à un capteur d'image.