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1. CN109073996 - METHOD AND APPARATUS TO DETERMINE A PATTERNING PROCESS PARAMETER

Office China
Application Number 201780027336.9
Application Date 01.03.2017
Publication Number 109073996
Publication Date 21.12.2018
Publication Kind A
IPC
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 7/70633
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70633Overlay
G03F 7/70683
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70683using process control mark, i.e. specific mark designs
G01B 3/14
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
3Instruments as specified in the subgroups and characterised by the use of mechanical measuring means
14Templates for checking contours
G01N 21/8851
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
G01N 21/9501
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
95characterised by the material or shape of the object to be examined
9501Semiconductor wafers
G01N 2021/8887
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
8887based on image processing techniques
Applicants ASML NETHERLANDS BV
ASML荷兰有限公司
Inventors VAN LEEST ADRIAAN JOHAN
A·J·范李斯特
TSIATMAS ANAGNOSTIS
A·蔡亚马斯
HINNEN PAUL CHRISTIAAN
P·C·欣南
MC NAMARA ELLIOTT GERARD
E·G·麦克纳马拉
VERMA ALOK
A·弗玛
THEEUWES THOMAS
T·希尤维斯
CRAMER HUGO AUGUSTINUS JOSEPH
H·A·J·克拉默
Agents 北京市金杜律师事务所 11256
北京市金杜律师事务所 11256
Priority Data 62/301,880 01.03.2016 US
62/435,630 16.12.2016 US
62/435,649 16.12.2016 US
62/435,662 16.12.2016 US
62/435,670 16.12.2016 US
62/458,932 14.02.2017 US
Title
(EN) METHOD AND APPARATUS TO DETERMINE A PATTERNING PROCESS PARAMETER
(ZH) 用于确定图案化工艺的参数的方法和设备
Abstract
(EN)
A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulatea perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality ofpixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

(ZH)
一种配置参数确定过程的方法,该方法包括:获得结构的数学模型,所述数学模型被配置为预测在用辐射光束照射所述结构时的光学响应,所述结构在标称物理配置下具有几何对称性;由硬件计算机系统使用所述数学模型来模拟所述结构的所述物理配置中的一定量的扰动,以确定多个像素中的每个像素中的所述光学响应的对应变化,从而获得多个像素灵敏度;以及基于所述像素灵敏度,确定多个权重,所述多个权重用于与衬底上的所述结构的经测量的像素光学特性值组合,以产生与所述物理配置中的变化相关联的参数的值,每个权重对应于一个像素。