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1. CN108336126 - Pixel structure, display device, and manufacturing method of pixel structure

Office China
Application Number 201810442219.5
Application Date 13.02.2015
Publication Number 108336126
Publication Date 27.07.2018
Publication Kind A
IPC
H01L 27/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52Details of devices
CPC
H01L 27/3246
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
3246Pixel defining structures, e.g. banks
H01L 51/5271
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5262Arrangements for extracting light from the device
5271Reflective means
H01L 2227/323
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2227Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L27/00
32Devices including an organic light emitting device [OLED], e.g. OLED display
323Multistep processes for AMOLED
H01L 2251/533
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2251Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
50Organic light emitting devices
53Structure
5307specially adapted for controlling the direction of light emission
533End-face emission
H01L 27/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
H01L 27/3283
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3281Passive matrix displays
3283including banks or shadow masks
Applicants BOE TECHNOLOGY GROUP CO., LTD.
京东方科技集团股份有限公司
Inventors HUANGFU LUJIANG
皇甫鲁江
MA WENYU
马文昱
GAO XINWEI
高昕伟
LI LIANGJIAN
李良坚
ZHANG CAN
张粲
Agents 中科专利商标代理有限责任公司 11021
Title
(EN) Pixel structure, display device, and manufacturing method of pixel structure
(ZH) 像素结构、显示装置以及像素结构的制作方法
Abstract
(EN)
The invention discloses a pixel structure, a display device provided with the pixel structure, and a manufacturing method of the pixel structure. The pixel structure comprises a first insulating layer, a light emitting unit, a pixel defining layer and a reflecting component, wherein the light emitting unit is arranged on the first insulating layer and comprises a first electrode layer, a light emitting layer and a second electrode layer; the pixel defining layer is constructed to define a pixel opening, the light emitting unit is arranged in the pixel opening; the reflecting component is arranged around the pixel defining layer to reflect the light entering the pixel defining layer from the light emitting layer to exit from an exit surface of the pixel structure; the reflecting component comprises a second insulating layer, a groove and a reflecting layer, the second insulating layer is located at the periphery of the pixel defining layer and is arranged on the first insulating layer;the groove is formed between the second insulating layer and the pixel defining layer; and the reflecting layer is arranged on the side, located on the second insulating layer, of the groove to reflect the light transmitting through the pixel defining layer.

(ZH)
公开了一种像素结构、具有这种像素结构的显示装置、以及像素结构的制作方法。像素结构,包括:第一绝缘层;发光单元,设置在所述第一绝缘层上,并包括第一电极层、发光层和第二电极层;像素界定层,被构造成用于限定像素开口,所述发光单元设置在所述像素开口中;以及反射组件,环绕所述像素界定层设置,以将从所述发光层入射到所述像素界定层中的光反射成从所述像素结构的出射面射出;所述反射组件包括:第二绝缘层,位于所述像素界定层的外围且设置在所述第一绝缘层上;沟槽,形成在所述第二绝缘层和所述像素界定层之间;和反射层,设置在所述沟槽的位于所述第二绝缘层的一侧,以反射穿过所述像素界定层的所述光。