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1. CN108074617 - Nonvolatile memory

Office China
Application Number 201611037221.1
Application Date 18.11.2016
Publication Number 108074617
Publication Date 25.05.2018
Publication Kind A
IPC
G11C 16/26
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
26Sensing or reading circuits; Data output circuits
G11C 16/06
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
CPC
G11C 16/06
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
G11C 16/26
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
26Sensing or reading circuits; Data output circuits
G11C 16/28
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
26Sensing or reading circuits; Data output circuits
28using differential sensing or reference cells, e.g. dummy cells
G11C 16/24
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
24Bit-line control circuits
G11C 16/30
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
30Power supply circuits
Applicants SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CO., LTD.
中芯国际集成电路制造(上海)有限公司
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CO., LTD.
中芯国际集成电路制造(北京)有限公司
Inventors ZHOU YAO
周耀
NI HAO
倪昊
Agents 北京集佳知识产权代理有限公司 11227
北京集佳知识产权代理有限公司 11227
Title
(EN) Nonvolatile memory
(ZH) 一种非易失性存储器
Abstract
(EN)
The invention discloses a nonvolatile memory. The nonvolatile memory comprises a first array library, a second array library, a first strobe circuit, a sense amplifier and a second strobe circuit, wherein the first array library and the second array library are respectively coupled with a first bit line and a second bit line; the first strobe circuit is suitable for being communicated with a firstoutput end of a pre-charging circuit and the first bit line and communicated with a second output end of the pre-charging circuit and the second bit line under the action of an address enable signalso as to charge the first bit line and the second bit line, or disconnecting the pre-charging circuit from the first bit line and the second bit line; a first input end of the sense amplifier is coupled with the first output end of the pre-charging circuit; a second input end of the sense amplifier is coupled with the second output end of the pre-charging circuit; a comparison result output by thesense amplifier indicates data information stored in the first array library or the second array library; and the second strobe circuit is suitable for controlling reference current to flow into oneof the first input end and the second input end of the sense amplifier under the action of a first word line signal and a second word line signal. The nonvolatile memory is capable of effectively reducing the data reading time.

(ZH)
一种非易失性存储器,包括:第一和第二阵列库,分别耦接第一和第二位线;第一选通电路,适于在地址使能信号的作用下,连通所述预充电电路的第一输出端与所述第一位线,并连通所述预充电电路的第二输出端与所述第二位线,以对所述第一位线和第二位线充电,或者断开预充电电路与第一位线和第二位线的连接;灵敏放大器,其第一输入端耦接预充电电路的第一输出端,其第二输入端耦接预充电电路的第二输出端,灵敏放大器输出的比较结果指示第一或第二阵列库所存储的数据信息;第二选通电路,适于在第一和第二字线信号的作用下,控制参考电流流入至灵敏放大器的第一和第二输入端其中之一。本发明方案可有效降低非易失性存储器的数据读取时间。

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