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1. CN107408936 - Elastic wave device and production method for same

Office China
Application Number 201680014166.6
Application Date 09.03.2016
Publication Number 107408936
Publication Date 28.11.2017
Publication Kind A
IPC
H03H 9/25
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25Constructional features of resonators using surface acoustic waves
H03H 3/02
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
H03H 3/08
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
08for the manufacture of resonators or networks using surface acoustic waves
H03H 9/145
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
125Driving means, e.g. electrodes, coils
145for networks using surface acoustic waves
H03H 9/17
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
15Constructional features of resonators consisting of piezo-electric or electrostrictive material
17having a single resonator
CPC
H03H 3/02
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
H03H 3/08
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
08for the manufacture of resonators or networks using surface acoustic waves
H03H 9/02574
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02543Characteristics of substrate, e.g. cutting angles
02574of combined substrates, multilayered substrates, piezo-electrical layers on not-piezo- electrical substrate
H03H 9/02897
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02818Means for compensation or elimination of undesirable effects
02897of strain or mechanical damage, e.g. strain due to bending influence
H03H 9/175
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
15Constructional features of resonators consisting of piezo-electric or electrostrictive material
17having a single resonator
171implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
172Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
175Acoustic mirrors
H03H 2003/025
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
025the resonators or networks comprising an acoustic mirror
Applicants MURATA MANUFACTURING CO., LTD.
Inventors KISHIMOTO YUTAKA
Priority Data 2015-051816 16.03.2015 JP
Title
(EN) Elastic wave device and production method for same
(ZH) 弹性波装置及其制造方法
Abstract
(EN)
Provided are an elastic wave device and a production method for the elastic wave device wherein layers do not easily separate during a dicing step. An elastic wave device (1) that is provided with: a piezoelectric body layer (2) that has a first main surface (2a) and a second main surface (2b) that is on the reverse side from the first main surface (2a); an acoustic reflection layer (5) that is laminated upon the first main surface (2a) of the piezoelectric body layer (2); an excitation electrode that is provided to the piezoelectric body layer (2); and a support layer (6). As seen in plan view from the side of the second main surface (2b) of the piezoelectric body layer (2), the acoustic reflection layer (5) is positioned so as to overlap at least the excitation electrode. At least as seen in plan view from the side of the second main surface (2b) of the piezoelectric body layer (2), the support layer (6) is provided so as to surround the acoustic reflection layer (5).

(ZH)
本发明提供一种在划片工序时难以产生层间的剥离的弹性波装置及其制造方法。弹性波装置(1)具备:压电体层(2),具有第一主面(2a)和与该第一主面(2a)对置的第二主面(2b);声反射层(5),层叠在压电体层(2)的第一主面(2a)上;激励电极,设置在压电体层(2);以及支承层(6)。声反射层(5)位于在从压电体层(2)的第二主面(2b)侧的俯视下至少与激励电极重叠的位置。支承层(6)设置为至少在从压电体层(2)的第二主面(2b)侧的俯视下包围声反射层(5)。

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