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1. CN103517870 - Novel compound semiconductor and usage for same

Office China
Application Number 201280022498.0
Application Date 11.05.2012
Publication Number 103517870
Publication Date 15.01.2014
Grant Number 103517870
Grant Date 03.02.2016
Publication Kind B
IPC
C01B 19/00
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
19Selenium; Tellurium; Compounds thereof
C01G 15/00
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
15Compounds of gallium, indium, or thallium
C01G 51/00
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
51Compounds of cobalt
C01G 30/00
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
30Compounds of antimony
H01L 31/032
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
032including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272-H01L31/0312154
CPC
C01G 51/006
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
51Compounds of cobalt
006Compounds containing, besides cobalt, two or more other elements, with the exception of oxygen or hydrogen
C01B 19/002
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
19Selenium; Tellurium; Compounds thereof
002Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
C01G 55/002
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
55Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
002Compounds containing, besides ruthenium, rhodium, palladium, osmium, iridium, or platinum, two or more other elements, with the exception of oxygen or hydrogen
C01P 2004/54
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2004Particle morphology
54Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
C01P 2006/40
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2006Physical properties of inorganic compounds
40Electric properties
H01L 31/032
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
032including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
Applicants LG化学株式会社
Inventors 朴哲凞
金兑训
Agents 北京鸿元知识产权代理有限公司 11327
北京鸿元知识产权代理有限公司 11327
Priority Data 10-2011-0045348 13.05.2011 KR
10-2011-0045349 13.05.2011 KR
10-2011-0049609 25.05.2011 KR
10-2012-0050257 11.05.2012 KR
Title
(EN) Novel compound semiconductor and usage for same
(ZH) 新的化合物半导体及其用途
Abstract
(EN)
A compound semiconductor according to the present invention can be represented by following chemical formula 1 [Chemical Formula 1] InxMyCo4-m-aAmSb12-n-zXnTez, wherein in the chemical formula 1, M is at least one element selected from a group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, A is at least one element from a group consisting of Fe, Ni, Ru, Rh, Pd, Ir, and Pt, X is at least one element selected from a group consisting of Si, Ga, Ge, and Sn, and wherein 0 < x < 1, 0 < y < 1, 0 <= m <= 1, 0 <= n < 9, 0 <z <= 2, and 0 < a <= 1.

(ZH)

本发明公开了可用于太阳能电池或用作热电材料的新型化合物半导体及其用途。本发明的化合物半导体可以由如下化学式1表示:[化学式1]InxMyCo4-m-aAmSb12-n-zXnTez,其中M为选自Ca、Sr、Ba、Ti、V、Cr、Mn、Cu、Zn、Ag、Cd、Sc、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb和Lu中的至少一种;A为选自Fe、Ni、Ru、Rh、Pd、Ir和Pt中的至少一种;X为选自Si、Ga、Ge和Sn中的至少一种;0&lt;x&lt;1;0&lt;y&lt;1;0≤m≤1;0≤n&lt;9;0&lt;z≤2;0&lt;a≤1。