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1. CN101965313 - Doped tin tellurides for thermoelectric applications

Office China
Application Number 200980108084.8
Application Date 05.02.2009
Publication Number 101965313
Publication Date 02.02.2011
Publication Kind A
IPC
C01B 19/00
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
19Selenium; Tellurium; Compounds thereof
H01L 23/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
38Cooling arrangements using the Peltier effect
H01L 35/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 35/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
C01B 19/002
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
19Selenium; Tellurium; Compounds thereof
002Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
C01B 19/007
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
19Selenium; Tellurium; Compounds thereof
007Tellurides or selenides of metals
C01P 2006/40
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2006Physical properties of inorganic compounds
40Electric properties
H01L 23/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
38Cooling arrangements using the Peltier effect
H01L 35/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 35/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
Applicants Basf Se
巴斯夫欧洲公司
Inventors Haass Frank
F·哈斯
Agents yang xiaoguang yu jing
北京市中咨律师事务所 11247
北京市中咨律师事务所 11247
Priority Data 08151149.5 07.02.2008 EP
Title
(EN) Doped tin tellurides for thermoelectric applications
(ZH) 用于热电应用的掺杂的碲化锡
Abstract
(EN)
The p- or n-conductive semiconductor material contains a compound of general formula (I) Sna Pb1-a-(x1+... +xn) A1 x1...An xn (Te1-p-q-r SepSqXr)1+z, in which 0.05 < a < 1, n = 1, where n is a number of chemical elements that differ from Sn and Pb, and independently 1 ppm = x1... xn = 0.05, A1... An differ from one another and are selected from the group of elements Li, Na, K, Rb, Cs, Mg, Ca, Y, Ti, Zr, Hf, Nb, Ta, Cr, Mn, Fe, Cu, Ag, Au, Ga, In, Tl, Ge, Sb, Bi X F, Cl, Br or l, 0 = p = 1, 0 = q = 1, 0 = r = 0.01, - 0.01 = z = 0.01, with the proviso that p + q + r = 1 und a + x1 +... + xn = 1.The invention also relates to a method used for producing the semiconductor material, and relates to an thermoelectric generator or Peltier device and the applications.

(ZH)

包含通式(I)SnaPb1-a-(x1+...+xn)A1x1...Anxn(Te1-p-q-rSepSqXr)1+z的化合物的p导电型或n导电型半导体材料,其中0.05<a<1,n≥1,其中n为不同于Sn和Pb的化学元素的数目,以及独立地1ppm≤x1...xn≤0.05,A1...An彼此不同并选自以下元素:Li、Na、K、Rb、Cs、Mg、Ca、Y、Ti、Zr、Hf、Nb、Ta、Cr、Mn、Fe、Cu、Ag、Au、Ga、In、Tl、Ge、Sb、Bi,X为F、Cl、Br或I,0≤p≤1,0≤q≤1,0≤r≤0.01,-0.01≤z≤0.01,附带条件为p+q+r≤1以及a+x1+...+xn≤1。本发明还涉及用于制造该类型的半导体材料的方法,涉及热电发电器或珀耳帖装置及其用途。