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1. CA1038268 - GROWING SINGLE CRYSTALS IN A CRUCIBLE

Office
Canada
Application Number 216766
Application Date
Publication Number 1038268
Publication Date 12.09.1978
Grant Number
Grant Date 12.09.1978
Publication Kind A
IPC
C30B 9/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
9Single-crystal growth from melt solutions using molten solvents
C30B 11/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
11Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C30B 17/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
17Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
C30B 27/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
27Single-crystal growth under a protective fluid
CPC
F28D 7/12
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
28HEAT EXCHANGE IN GENERAL
DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
7Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall
10the conduits being arranged one within the other, e.g. concentrically
12the surrounding tube being closed at one end, e.g. return type
C30B 11/003
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
11Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
003Heating or cooling of the melt or the crystallised material
C30B 17/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
17Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
C30B 27/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
27Single-crystal growth under a protective fluid
C30B 29/20
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
20Aluminium oxides
F28D 2021/0057
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
28HEAT EXCHANGE IN GENERAL
DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
21Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
0019Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
0056for ovens or furnaces
0057for melting materials
Inventors SCHMID, FREDERICK
Title
(EN) GROWING SINGLE CRYSTALS IN A CRUCIBLE
(FR) FORMATION DE MONOCRISTAUX DANS UN CREUSET
Abstract
(EN)
ABSTRACT Process for growing single crystals, including the steps of placing material in a crucible, heating the crucible to above the melting point of the material to melt it, and thereafter solidifying the melted material by extracting heat from a bottom portion of the crucible, wherein the tempera- ture of at least those portions of the side walls of the crucible that are in contact with the material within the crucible are maintained above the melting point of the material and simultaneously the temperature of said bottom portion is reduced below the melting point of the material, until substantially all the material within the crucible has solidified. In a modified form of the process, a seed crystal is placed in the crucible initially. Process is useful for growing single crystals of many materials, such as ceramics, metals and composite materials, typically sapphire, ruby, spinels, eutectics and gallium phosphide.