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1. WO2022249915 - SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

Publication Number WO/2022/249915
Publication Date 01.12.2022
International Application No. PCT/JP2022/020370
International Filing Date 16.05.2022
IPC
C30B 29/36 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
C30B 25/18 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
18characterised by the substrate
CPC
C30B 25/18
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
18characterised by the substrate
C30B 29/36
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
Applicants
  • 住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP]/[JP]
Inventors
  • 西原 弘樹 NISHIHARA, Hiroki
  • 本家 翼 HONKE, Tsubasa
  • 宮瀬 貴也 MIYASE, Takaya
  • 榎薗 太郎 ENOKIZONO, Taro
Agents
  • 弁理士法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.
Priority Data
2021-08762425.05.2021JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE
(FR) SUBSTRAT ÉPITAXIQUE AU CARBURE DE SILICIUM ET PROCÉDÉ DE PRODUCTION D’UN DISPOSITIF SEMI-CONDUCTEUR AU CARBURE DE SILICIUM
(JA) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
Abstract
(EN) This silicon carbide epitaxial substrate has a silicon carbide substrate and a silicon carbide epitaxial layer. The silicon carbide epitaxial layer is located on the silicon carbide substrate and has a main surface on the opposite side from the interface of the silicon carbide substrate and the silicon carbide epitaxial layer. The surface density of pits in the main surface is 1/cm2 or less. The surface density of bumps on the main surface is less than 0.7/cm2. When viewed in a direction perpendicular to the main surface, the area of pits is 100 μm2 or less, and the area of bumps is 100 μm2 or less. In a direction perpendicular to the main surface, the depth of pits is 0.01-0.1 μm, and the height of bumps is 0.01-0.1 μm.
(FR) La présente invention concerne un substrat épitaxique au carbure de silicium comportant un substrat au carbure de silicium et une couche épitaxique au carbure de silicium. La couche épitaxique au carbure de silicium est située sur le substrat au carbure de silicium et possède une surface principale sur le côté opposé de l'interface du substrat au carbure de silicium et de la couche épitaxique au carbure de silicium. La densité des creux sur la surface principale est de 1/cm2 ou moins. La densité des protubérances sur la surface principale est inférieure à 0,7/cm2. Lorsqu'elle est vue dans une direction perpendiculaire à la surface principale, la surface des creux est de 100 μm2 ou moins, et la surface des protubérances est de 100 μm2 ou moins. Dans une direction perpendiculaire à la surface principale, la profondeur des creux est de 0,01 à 0,1 µm, et la hauteur des protubérances est de 0,01 à 0,1 µm.
(JA) 炭化珪素エピタキシャル基板は、炭化珪素基板と、炭化珪素エピタキシャル層と有している。炭化珪素エピタキシャル層は、炭化珪素基板上にある炭化珪素エピタキシャル層は、炭化珪素基板と炭化珪素エピタキシャル層との界面の反対側にある主面を有している。主面におけるピットの面密度は、1個/cm2以下である。主面におけるバンプの面密度は、0.7個/cm2未満である。主面に対して垂直な方向に見て、ピットの面積は100μm2以下であり、かつ、バンプの面積は、100μm2以下である。主面に対して垂直な方向において、ピットの深さは0.01μm以上0.1μm以下であり、かつ、バンプの高さは0.01μm以上0.1μm以下である。
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