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1. WO2022211835 - ENHANCING PERFORMANCE OF OVERLAY METROLOGY

Publication Number WO/2022/211835
Publication Date 06.10.2022
International Application No. PCT/US2021/039472
International Filing Date 29.06.2021
IPC
G01N 21/956 2006.1
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws, defects or contamination
95characterised by the material or shape of the object to be examined
956Inspecting patterns on the surface of objects
G01N 21/95 2006.1
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws, defects or contamination
95characterised by the material or shape of the object to be examined
G01N 21/88 2006.1
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws, defects or contamination
H01L 21/66 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
G03F 7/00 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
CPC
G02B 27/283
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
27Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
28for polarising
283used for beam splitting or combining
G03F 7/70633
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70633Overlay
G03F 7/70641
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70641Focus
H04N 5/2256
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
222Studio circuitry; Studio devices; Studio equipment ; ; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, TV cameras, video cameras, camcorders, webcams, camera modules for embedding in other devices, e.g. mobile phones, computers or vehicles
225Television cameras ; ; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, camcorders, webcams, camera modules specially adapted for being embedded in other devices, e.g. mobile phones, computers or vehicles
2256provided with illuminating means
Applicants
  • KLA CORPORATION [US]/[US]
Inventors
  • MANASSEN, Amnon
  • HILL, Andrew V.
  • VAKNIN, Yonatan
  • SIMON, Yossi
  • NEGRI, Daria
  • LEVINSKI, Vladimir
  • PASKOVER, Yuri
  • GOLOTSVAN, Anna
  • ROTHMAN, Nachshon
  • REDDY, Nireekshan K.
  • BEN DAVID, Nir
  • ABRAMOV, Avi
  • YAACOV, Dror
  • UZIEL, Yoram
  • GUTMAN, Nadav
Agents
  • MCANDREWS, Kevin
  • MORRIS, Elizabeth M.N.
  • SPURLOCK, Justin Delorean
Priority Data
17/219,86931.03.2021US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) ENHANCING PERFORMANCE OF OVERLAY METROLOGY
(FR) AMÉLIORATION DES PERFORMANCES DE MÉTROLOGIE DE RECOUVREMENTS
Abstract
(EN) A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.
(FR) Un procédé de métrologie consiste à diriger au moins un faisceau d'éclairage pour éclairer une tranche semi-conductrice sur laquelle ont été successivement déposées au moins des première et seconde couches à motifs, comprenant un premier élément cible dans la première couche à motifs et un second élément cible dans la seconde couche à motifs, recouvrant le premier élément cible. Une séquence d'images des premier et second éléments cibles est capturée pendant la variation d'un ou de plusieurs paramètres d'imagerie lors de la séquence. Les images de la séquence sont traitées afin d'identifier des centres de symétrie respectifs des premier et second éléments cibles parmi les images et de mesurer des variations des centres de symétrie en fonction des paramètres variables d'images. Les variations mesurées s'appliquent à la mesure d'une erreur de recouvrement entre les première et seconde couches à motifs.
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