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1. WO2022211057 - SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

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Publication Number WO/2022/211057
Publication Date 06.10.2022
International Application No. PCT/JP2022/016672
International Filing Date 31.03.2022
IPC
H05H 1/46 2006.1
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 21/3065 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H05H 1/46
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 石川　慎也 ISHIKAWA, Shinya
  • 小野　健太 ONO, Kenta
  • 本田　昌伸 HONDA, Masanobu
Agents
  • 佐藤　睦 SATO, Atsushi
  • 大石　幸雄 OISHI, Yukio
  • 澤井　光一 SAWAI, Koichi
  • 高村　和宗 TAKAMURA, Kazumune
Priority Data
2021-06293501.04.2021JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
(FR) PROCÉDÉ DE TRAITEMENT DE SUBSTRAT ET DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理方法および基板処理装置
front page image
Abstract
(EN) Provided is a feature for controlling the dimensions and/or shape of an opening to be formed in a film to be etched. A substrate processing method according to the present disclosure comprises: a step for preparing a substrate having (a) a film to be etched, (b) a mask film formed on the film to be etched and having a side wall defining at least one opening on the film to be etched, and (c) a protective film formed on at least the side wall of the mask film so as to surround the opening, and containing at least one element selected from the group consisting of boron, phosphorus, sulfur, and tin; and a step for etching the film to be etched using the protective film and the mask film as a mask.
(FR) La présente invention concerne une fonction permettant de réguler les dimensions et/ou la forme d'une ouverture à former dans un film à graver. Procédé de traitement de substrat selon la présente divulgation comprenant les étapes suivantes : préparation d'un substrat comportant (a) un film à graver, (b) un film de masque formé sur le film à graver et comportant une paroi latérale délimitant au moins une ouverture sur le film à graver, et (c) un film protecteur formé sur au moins la paroi latérale du film de masque de manière à entourer l'ouverture, et contenant au moins un élément choisi dans le groupe constitué par le bore, le phosphore, le soufre et l'étain ; et gravure du film à graver en utilisant le film protecteur et le film de masque comme masque.
(JA) 被エッチング膜に形成される開口の寸法及び／又は形状を制御する技術を提供する。本開示に係る基板処理方法は、（ａ）被エッチング膜と、（ｂ）前記被エッチング膜上に形成されており、前記被エッチング膜上に少なくとも１つの開口を規定する側壁を有するマスク膜と、（ｃ）前記マスク膜のうち少なくとも前記側壁上において前記開口を囲んで形成されており、ホウ素、リン、硫黄及びスズからなる群から選択される少なくとも１つの元素を含む保護膜とを有する基板を準備する工程と、前記保護膜及び前記マスク膜をマスクとして、前記被エッチング膜をエッチングする工程とを含む。
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