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1. WO2022210996 - THERMOELECTRIC CONVERSION MODULE

Publication Number WO/2022/210996
Publication Date 06.10.2022
International Application No. PCT/JP2022/016375
International Filing Date 31.03.2022
IPC
H01L 35/08 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04Structural details of the junction; Connections of leads
08non-detachable, e.g. cemented, sintered, soldered
H01L 35/16 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 35/24 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
24using organic compositions
H01L 35/34 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 35/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04Structural details of the junction; Connections of leads
08non-detachable, e.g. cemented, sintered, soldered ; , e.g. thin films
H01L 35/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 35/24
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
24using organic compositions
H01L 35/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus specially adapted for peculiar to the manufacture or treatment of these devices or of parts thereof
Applicants
  • リンテック株式会社 LINTEC CORPORATION [JP]/[JP]
Inventors
  • 森田 亘 MORITA, Wataru
  • 関 佑太 SEKI, Yuta
  • 加藤 邦久 KATO, Kunihisa
  • 升本 睦 MASUMOTO, Mutsumi
Agents
  • 弁理士法人大谷特許事務所 OHTANI PATENT OFFICE
Priority Data
2021-06220831.03.2021JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) THERMOELECTRIC CONVERSION MODULE
(FR) MODULE DE CONVERSION THERMOÉLECTRIQUE
(JA) 熱電変換モジュール
Abstract
(EN) Provided is a thermoelectric conversion module which suppresses residual voids inside a soldering material layer, improves the bonding properties of a thermoelectric conversion material chip onto an electrode, and has each of the P-type thermoelectric conversion material chips and the N-type thermoelectric conversion material chips thereof, which are separated from one another, bonded to an electrode with a soldering material interposed therebetween, wherein: wall structures which are separated from one another are provided so as to be positioned to the outside of the entire periphery of the regions on the electrodes where the P-type thermoelectric conversion material chips and the N-type thermoelectric conversion material chips are bonded thereto; and the distance between at least one wall surface among the inside wall surfaces of the wall structures and each of the lateral surfaces of the P-type thermoelectric conversion material chip and the N-type thermoelectric conversion material chip nearest said wall surface is at least 1μm.
(FR) L'invention concerne un module de conversion thermoélectrique qui supprime des vides résiduels à l'intérieur d'une couche de matériau de brasage, améliore les propriétés de liaison d'une puce de matériau de conversion thermoélectrique sur une électrode, et présente chacune des puces de matériau de conversion thermoélectrique du type P et des puces de matériau de conversion thermoélectrique du type N de ces dernières, qui sont séparées les unes des autres, liées à une électrode avec un matériau de brasage interposé entre ces dernières : des structures de paroi qui sont séparées les unes des autres étant disposées de manière à être positionnées à l'extérieur de la périphérie entière des régions sur les électrodes où les puces de matériau de conversion thermoélectrique du type P et les puces de matériau de conversion thermoélectrique du type N sont liées à ces dernières; et la distance entre au moins une surface de paroi parmi les surfaces de paroi intérieure des structures de paroi et chacune des surfaces latérales de la puce de matériau de conversion thermoélectrique du type P et la puce de matériau de conversion thermoélectrique du type N la plus proche de ladite surface de paroi est d'au moins 1 µm.
(JA) はんだ材料層内の残留ボイドが抑制され、電極に対する熱電変換材料のチップの接合性が向上された熱電変換モジュールを提供するものであり、交互に離間するP型熱電変換材料のチップ及びN型熱電変換材料のチップのそれぞれが、はんだ材料を介在し電極に接合される熱電変換モジュールであって、前記電極上の、前記P型熱電変換材料のチップ及びN型熱電変換材料のチップと接合するそれぞれの領域の全周囲より外側に配置される、互いに離間する壁構造体をそれぞれ備え、前記壁構造体の内側の壁面のうち少なくとも一つの壁面と、前記壁面に対面し、かつ最近接する前記P型熱電変換材料のチップ及びN型熱電変換材料のチップのそれぞれの側面との距離が1μm以上である、熱電変換モジュール。
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