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1. WO2022210901 - COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM

Publication Number WO/2022/210901
Publication Date 06.10.2022
International Application No. PCT/JP2022/016071
International Filing Date 30.03.2022
IPC
C08G 77/14 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
77Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
04Polysiloxanes
14containing silicon bound to oxygen-containing groups
G03F 7/11 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/20 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/26 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
CPC
C08G 77/14
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
04Polysiloxanes
14containing silicon bound to oxygen-containing groups
G03F 7/11
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/26
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
Applicants
  • 日産化学株式会社 NISSAN CHEMICAL CORPORATION [JP]/[JP]
Inventors
  • 武田 諭 TAKEDA, Satoshi
  • 柴山 亘 SHIBAYAMA, Wataru
  • 志垣 修平 SHIGAKI, Shuhei
  • 加藤 宏大 KATO, Kodai
Agents
  • 弁理士法人はなぶさ特許商標事務所 HANABUSA PATENT & TRADEMARK OFFICE
Priority Data
2021-06165231.03.2021JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM
(FR) COMPOSITION POUR FORMER UN FILM DE SOUS-COUCHE DE RÉSERVE CONTENANT DU SILICIUM
(JA) シリコン含有レジスト下層膜形成用組成物
Abstract
(EN) [Problem] To provide a composition for forming a silicon-containing underlayer film, said composition being for forming a silicon-containing resist underlayer film such that it is possible to obtain a good resist pattern without pattern collapse even if the resist underlayer film has a thinner thickness compared to conventional products, such as a film thickness of 10 nm or less. [Solution] This composition for forming a silicon-containing resist underlayer film contains: [A] a polysiloxane whose weight-average molecular weight obtained with polystyrene conversion via gel permeation chromatography (GPC) analysis is 1,800 or less, and whose ratio of molecular weights greater than 2,500 in an integral molecular weight distribution curve obtained with polystyrene conversion via gel permeation chromatography (GPC) analysis is less than 20%; and [B] a solvent.
(FR) La présente invention vise à fournir une composition pour former un film de sous-couche contenant du silicium, ladite composition étant destinée à former un film de sous-couche de réserve contenant du silicium de sorte qu'il est possible d'obtenir un bon motif de réserve sans effondrement de motif même si le film de sous-couche de réserve a une épaisseur plus fine par comparaison avec des produits classiques, telle qu'une épaisseur de film de 10 nm ou moins. À cet effet, la composition pour former un film de sous-couche de réserve contenant du silicium contient: [A] un polysiloxane dont le poids moléculaire moyen en poids est obtenu avec une conversion de polystyrène par l'analyse de chromatographie par perméation de gel (GPC) est de 1,800 ou moins, et dont le rapport des masses moléculaires est supérieur à 2,500 dans une courbe de distribution de poids moléculaire intégrale obtenue avec une conversion de polystyrène par analyse de chromatographie par perméation de gel (GPC) est inférieure à 20 %; et [B] un solvant.
(JA) 【課題】膜厚が10nm以下など、従来と比して厚さの薄いレジスト下層膜であっても、パターン倒壊のない良好なレジストパターンを得られるシリコン含有レジスト下層膜を形成するための、シリコン含有下層膜形成用組成物を提供すること。 【解決手段】[A]ゲル浸透クロマトグラフィー(GPC)分析によるポリスチレン換算にて得られる重量平均分子量が1,800以下であり、かつ、ゲル浸透クロマトグラフィー(GPC)分析によるポリスチレン換算にて得られる積分分子量分布曲線において分子量2,500超の割合が20%未満である、ポリシロキサン、及び[B]溶媒を含有する、シリコン含有レジスト下層膜形成用組成物。
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