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1. WO2022210117 - GAS PIPING TEMPERATURE CONTROL SYSTEM AND TEMPERATURE OPERATION DEVICE

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Publication Number WO/2022/210117
Publication Date 06.10.2022
International Application No. PCT/JP2022/013248
International Filing Date 22.03.2022
IPC
C23C 16/44 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
H01L 21/205 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/3065 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
C23C 16/44
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
H01L 21/2015
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
2003Characterised by the substrate
2015the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
Applicants
  • エドワーズ株式会社 EDWARDS JAPAN LIMITED [JP]/[JP]
Inventors
  • 高橋　克典 TAKAHASHI Katsunori
  • 田村　達基 TAMURA Tatsuki
Priority Data
2021-06175031.03.2021JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) GAS PIPING TEMPERATURE CONTROL SYSTEM AND TEMPERATURE OPERATION DEVICE
(FR) SYSTÈME DE RÉGULATION DE TEMPÉRATURE DE CANALISATION DE GAZ ET DISPOSITIF DE COMMANDE DE TEMPÉRATURE
(JA) ガス配管温調システム及び温度動作装置
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Abstract
(EN) [Problem] To provide a gas piping temperature control system and a temperature operation device that are inexpensive and enable prevention of burning of a seal member in a flange connection portion caused by an excessive rise in temperature of the gas piping, and gas leakage due to the burning. [Solution] By enabling temperature control of the flange connection portion, burning of the seal member that may be caused by an excessive rise in temperature of the gas piping portion can be prevented. The temperature control is carried out when a temperature detected by a temperature operation unit is no lower than a set temperature, whereupon the temperature operation unit operates to interrupt electric power supply from a power source to a heater. In order to prevent burning of the seal member, the temperature operation unit is arranged directly at the perimeter of the flange connection portion, or the temperature operation unit is disposed around the gas piping adjacent to the flange connection portion confirmed to have substantially the same temperature as at the perimeter of the flange connection portion. Thus, by indirectly detecting the perimeter temperature of this flange connection portion, it is possible to control the temperature of the flange connection portion or to issue a warning.
(FR) Le problème décrit par la présente invention concerne un système de régulation de la température d'une canalisation de gaz et un dispositif de commande de la température, qui sont peu coûteux et qui permettent de prévenir la combustion d'un élément d'étanchéité dans une partie de raccord à bride, laquelle combustion est provoquée par une augmentation excessive de la température de la canalisation de gaz, et une fuite de gaz due à la combustion. La solution selon l'invention porte sur la mise en œuvre d'une régulation de la température de la partie de raccord à bride, la combustion de l'élément d'étanchéité qui peut être provoquée par une augmentation excessive de la température de la partie de canalisation de gaz pouvant être empêchée. La régulation de la température est effectuée lorsqu'une température détectée par une unité de commande de la température n'est pas inférieure à une température définie, après quoi l'unité de commande de la température commande l'interruption de l'alimentation électrique provenant d'une source d'alimentation à un dispositif de chauffage. Afin d'empêcher la combustion de l'élément d'étanchéité, l'unité de commande de la température est agencée directement au niveau du périmètre de la partie de raccord à bride ou l'unité commande de la température est disposée autour de la canalisation de gaz à côté à la partie de raccord à bride en un endroit dont on a confirmé qu'il présente sensiblement la même température qu'au niveau du périmètre de la partie de raccord à bride. Ainsi, par la détection indirecte de la température de périmètre de cette partie de raccord à bride, il est possible de réguler la température de la partie de raccord à bride ou d'émettre un avertissement.
(JA) 【課題】ガス配管の過昇温に伴い生ずるフランジ接続部のシール部材の焼損やこの焼損によるガス漏れを防止することのできる安価なガス配管温調システム及び温度動作装置を提供する。 【解決手段】フランジ接続部について温度調整を可能とすることで、ガス配管部分の過昇温に伴い生ずるおそれのあるシール部材の焼損を防止できる。この温度調整は、温度動作部で検知した温度が設定温度以上となったときに、温度動作部が動作して、電源からヒータへの電力の供給を切断することで行う。このシール部材の焼損防止のためには、フランジ接続部の周囲に直接温度動作部を配置、若しくはフランジ接続部の周囲とほぼ同じ温度であることが確認されているフランジ接続部に隣接したガス配管周りに温度動作部を配設する。これにより、間接的にこのフランジ接続部の周囲温度を検出することで、フランジ接続部の温度調整や警報を可能とした。
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