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1. WO2022210088 - SUBSTRATE-PROCESSING APPARATUS AND SUBSTRATE-PROCESSING METHOD

Publication Number WO/2022/210088
Publication Date 06.10.2022
International Application No. PCT/JP2022/013136
International Filing Date 22.03.2022
IPC
H01L 21/027 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H01L 21/304 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 広城 幸吉 HIROSHIRO, Koukichi
  • 中森 光則 NAKAMORI, Mitsunori
  • 川渕 洋介 KAWABUCHI, Yosuke
Agents
  • 伊東 忠重 ITOH, Tadashige
  • 伊東 忠彦 ITOH, Tadahiko
Priority Data
2021-06269401.04.2021JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE-PROCESSING APPARATUS AND SUBSTRATE-PROCESSING METHOD
(FR) APPAREIL DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置、および基板処理方法
Abstract
(EN) This substrate-processing method includes applying vibration, using a vibrator, to a substrate that has a first main surface and a second main surface facing opposite each other and that includes a recess and projection pattern on the first main surface, in a state in which the entire first main surface is exposed.
(FR) Ce procédé de traitement de substrat comprend l'application de vibrations, à l'aide d'un vibreur, à un substrat qui a une première surface principale et une seconde surface principale se faisant face et qui comprend un motif d'évidement et de saillie sur la première surface principale, dans un état dans lequel la totalité de la première surface principale est exposée.
(JA) 基板処理方法は、互いに反対向きの第1主面と第2主面とを有し前記第1主面に凹凸パターンを含む基板に対して、前記第1主面の全体が露出した状態で、振動子によって振動を印可することを含む。
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