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1. WO2022209750 - HIGH FREQUENCY MODULE AND COMMUNICATION DEVICE

Publication Number WO/2022/209750
Publication Date 06.10.2022
International Application No. PCT/JP2022/010865
International Filing Date 11.03.2022
IPC
H04B 1/38 2015.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
BTRANSMISSION
1Details of transmission systems, not covered by a single one of groups H04B3/-H04B13/123; Details of transmission systems not characterised by the medium used for transmission
38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
H01L 23/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 23/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
H01L 25/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 25/065 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/78
H01L 25/07 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
CPC
H01L 23/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 23/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
H01L 25/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
H01L 25/065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/00
H01L 25/07
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/00
H01L 25/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00
Applicants
  • 株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP]/[JP]
Inventors
  • 相川 清志 AIKAWA, Kiyoshi
  • 北嶋 宏通 KITAJIMA, Hiromichi
  • 山田 隆司 YAMADA, Takashi
  • 大門 義弘 DAIMON, Yoshihiro
  • 上嶋 孝紀 UEJIMA, Takanori
Agents
  • 吉川 修一 YOSHIKAWA, Shuichi
  • 傍島 正朗 SOBAJIMA, Masaaki
Priority Data
2021-06034131.03.2021JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) HIGH FREQUENCY MODULE AND COMMUNICATION DEVICE
(FR) MODULE HAUTE FRÉQUENCE ET DISPOSITIF DE COMMUNICATION
(JA) 高周波モジュール及び通信装置
Abstract
(EN) This high frequency module (1A) comprises: a module substrate (91) having main surfaces (91a and 91b) facing each other; a module substrate (92) having main surfaces (92a and 92b) facing each other, the main surface (92a) facing the main surface (91b); a plurality of electronic components arranged between the main surfaces (91b and 92a) and on the main surface (91a) and the main surface (92b); and a plurality of external connection terminals (150) arranged on the main surface (92b), wherein the plurality of electronic components include one or more first electronic components, each of which has at least a transistor, and one or more second electronic components, each of which does not have a transistor, and on the main surface (92b), at least one of one or more first electronic components is arranged and one or more second electronic components are not arranged.
(FR) La présente invention concerne un module haute fréquence (1A) qui comprend : un substrat de module (91) ayant des surfaces principales (91a et 91b) en regard l'une de l'autre ; un substrat de module (92) ayant des surfaces principales (92a et 92b) en regard l'une de l'autre, la surface principale (92a) faisant face à la surface principale (91b) ; une pluralité de composants électroniques disposés entre les surfaces principales (91b et 92a) et sur la surface principale (91a) et la surface principale (92b) ; et une pluralité de bornes de connexion externes (150) disposée sur la surface principale (92b), la pluralité de composants électroniques comprenant un ou plusieurs premiers composants électroniques, chacun de ceux-ci ayant au moins un transistor, et un ou plusieurs seconds composants électroniques, dont chacun n'a pas de transistor, et sur la surface principale (92b), au moins l'un d'un ou de plusieurs premiers composants électroniques est agencé et un ou plusieurs seconds composants électroniques ne sont pas agencés.
(JA) 高周波モジュール(1A)は、互いに対向する主面(91a及び91b)を有するモジュール基板(91)と、互いに対向する主面(92a及び92b)を有し、主面(92a)が主面(91b)に対面して配置されたモジュール基板(92)と、主面(91b及び92a)の間と主面(91a)上と主面(92b)上とに配置された複数の電子部品と、主面(92b)上に配置された複数の外部接続端子(150)と、を備え、複数の電子部品は、少なくともトランジスタをそれぞれ有する1以上の第1電子部品と、トランジスタをそれぞれ有さない1以上の第2電子部品と、を含み、主面(92b)上には、1以上の第1電子部品の少なくとも1つが配置され、かつ、1以上の第2電子部品が配置されていない。
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