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1. WO2022209729 - HIGH-FREQUENCY MODULE AND COMMUNICATION DEVICE

Publication Number WO/2022/209729
Publication Date 06.10.2022
International Application No. PCT/JP2022/010796
International Filing Date 11.03.2022
IPC
H04B 1/38 2015.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
BTRANSMISSION
1Details of transmission systems, not covered by a single one of groups H04B3/-H04B13/123; Details of transmission systems not characterised by the medium used for transmission
38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
H01L 23/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 23/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
H01L 25/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 25/065 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/78
H01L 25/07 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
CPC
H01L 23/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 23/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
H01L 25/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
H01L 25/065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/00
H01L 25/07
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/00
H01L 25/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00
Applicants
  • 株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP]/[JP]
Inventors
  • 上嶋 孝紀 UEJIMA, Takanori
  • 北嶋 宏通 KITAJIMA, Hiromichi
  • 相川 清志 AIKAWA, Kiyoshi
  • 大門 義弘 DAIMON, Yoshihiro
  • 山田 隆司 YAMADA, Takashi
Agents
  • 吉川 修一 YOSHIKAWA, Shuichi
  • 傍島 正朗 SOBAJIMA, Masaaki
Priority Data
2021-06027831.03.2021JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) HIGH-FREQUENCY MODULE AND COMMUNICATION DEVICE
(FR) MODULE HAUTE FRÉQUENCE ET DISPOSITIF DE COMMUNICATION
(JA) 高周波モジュール及び通信装置
Abstract
(EN) A high-frequency module (1A) comprises: a module substrate (91) which has main surfaces (91a and 91b) opposing each other; a module substrate (92) which has main surfaces (92a and 92b) opposing each other and in which the main surface (92a) is disposed to face the main surface (91b); a plurality of electronic components arranged between the main surfaces (91b and 92a), and on the main surface (91a) and the main surface (92b); and a plurality of external connection terminals (150) arranged on the main surface (92b) and joined to the module substrate (92) and a mother substrate (1000). The absolute value of a difference between the thermal expansion coefficient of the module substrate (92) and the thermal expansion coefficient of the mother substrate (1000) is smaller than the absolute value of a difference between the thermal expansion coefficient of the module substrate (91) and the thermal expansion coefficient of the mother substrate (1000).
(FR) L'invention concerne un module haute fréquence (1A) comprenant : un substrat de module (91) qui a des surfaces principales (91a et 91b) opposées l'une à l'autre ; un substrat de module (92) qui a des surfaces principales (92a et 92b) opposées l'une à l'autre et dans lequel la surface principale (92a) est disposée pour faire face à la surface principale (91b) ; une pluralité de composants électroniques disposés entre les surfaces principales (91b et 92a), et sur la surface principale (91a) et la surface principale (92b) ; et une pluralité de bornes de connexion externes (150) disposées sur la surface principale (92b) et jointes au substrat de module (92) et à un substrat mère (1000). La valeur absolue d'une différence entre le coefficient de dilatation thermique du substrat de module (92) et le coefficient de dilatation thermique du substrat mère (1000) est inférieur à la valeur absolue d'une différence entre le coefficient de dilatation thermique du substrat de module (91) et le coefficient de dilatation thermique du substrat mère (1000).
(JA) 高周波モジュール(1A)は、互いに対向する主面(91a及び91b)を有するモジュール基板(91)と、互いに対向する主面(92a及び92b)を有し、主面(92a)が主面(91b)に対面して配置されたモジュール基板(92)と、主面(91b及び92a)の間と主面(91a)上と主面(92b)上とに配置された複数の電子部品と、主面(92b)上に配置され、モジュール基板(92)及びマザー基板(1000)に接合された複数の外部接続端子(150)と、を備え、モジュール基板(92)の熱膨張係数とマザー基板(1000)の熱膨張係数との差の絶対値は、モジュール基板(91)の熱膨張係数とマザー基板(1000)の熱膨張係数との差の絶対値よりも小さい。
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