Processing

Please wait...

Settings

Settings

Goto Application

1. WO2022209327 - IMAGING DEVICE

Publication Number WO/2022/209327
Publication Date 06.10.2022
International Application No. PCT/JP2022/005077
International Filing Date 09.02.2022
IPC
H01L 27/146 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369 2011.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
CPC
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 桝田 佳明 MASUDA Yoshiaki
  • 畑野 啓介 HATANO Keisuke
  • 関 大一 SEKI Hirokazu
  • 戸田 淳 TODA Atsushi
  • 納土 晋一郎 NOUDO Shinichiro
  • 大池 祐輔 OIKE Yusuke
  • 大岡 豊 OOKA Yutaka
  • 佐々木 直人 SASAKI Naoto
  • 坂元 俊起 SAKAMOTO Toshiki
  • 森川 隆史 MORIKAWA Takafumi
Agents
  • 中村 行孝 NAKAMURA Yukitaka
  • 宮嶋 学 MIYAJIMA Manabu
Priority Data
2021-05878730.03.2021JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) IMAGING DEVICE
(FR) DISPOSITIF D'IMAGERIE
(JA) 撮像装置
Abstract
(EN) [Problem] To provide an imaging device which can suppress the influence of flare. [Solution] This imaging device comprises: a pixel region in which a plurality of pixels for performing photoelectric conversion are arranged; an on-chip lens provided above the pixel region; a protective member provided above the on-chip lens; and a resin layer bonding the on-chip lens and the protective member together. T≥L/2/tanθc (equation 2) or T≥L/4/tanθc (equation 3) is satisfied when: the thickness of the resin layer and the protective member is defined as T, the length of a diagonal line of the pixel region viewed from the incident direction of light is defined as L; and the critical angle of the protective member is defined as θc,
(FR) Le problème décrit par la présente invention est de fournir un dispositif d'imagerie qui peut supprimer l'influence de la lumière parasite. La solution selon l'invention porte sur un dispositif d'imagerie qui comprend : une région de pixel dans laquelle une pluralité de pixels pour réaliser une conversion photoélectrique sont agencés ; une lentille sur puce disposée au-dessus de la région de pixel ; un élément de protection disposé au-dessus de la lentille sur puce ; et une couche de résine collant ensemble la lentille sur puce et l'élément de protection. T ≥ L/2/tanθc (equation 2) or T ≥ L/4/tanθc (équation 3) est satisfaite lorsque : l'épaisseur de la couche de résine et de l'élément de protection est définie comme T, la longueur d'une ligne diagonale de la région de pixel vue à partir de la direction d'incidence de la lumière est définie comme L ; et l'angle critique de l'élément de protection est défini comme étant θc,
(JA) [課題]フレアの影響を抑制することができる撮像装置を提供する。 [解決手段]本開示による撮像装置は、光電変換を行う複数の画素が配列された画素領域と、画素領域上に設けられたオンチップレンズと、オンチップレンズ上に設けられた保護部材と、オンチップレンズと保護部材との間を接着する樹脂層とを備え、樹脂層および保護部材の厚みをTとし、光の入射方向から見た画素領域の対角線の長さをLとし、保護部材の臨界角をθcとすると、T≧L/2/tanθc(式2)またはT≧L/4/tanθc(式3)を満たす。
Latest bibliographic data on file with the International Bureau