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1. WO2022207298 - REVERSIBLE RESISTIVE MEMORY LOGIC GATE DEVICE

Publication Number WO/2022/207298
Publication Date 06.10.2022
International Application No. PCT/EP2022/056567
International Filing Date 14.03.2022
IPC
H01L 27/24 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
H01L 45/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H03K 19/00 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
19Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
CPC
G11C 13/0004
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0004comprising amorphous/crystalline phase transition cells
G11C 13/004
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
004Reading or sensing circuits or methods
G11C 13/0069
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
G11C 2013/0045
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
004Reading or sensing circuits or methods
0045Read using current through the cell
G11C 2013/0078
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
0078Write using current through the cell
H01L 27/24
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US]
  • IBM UNITED KINGDOM LIMITED [GB]/[GB] (MG)
Inventors
  • CHEN, Hsueh-Chung
  • WANG, Junli
  • FAN, Su Chen
Agents
  • WILLIAMS, Julian
Priority Data
17/216,62229.03.2021US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) REVERSIBLE RESISTIVE MEMORY LOGIC GATE DEVICE
(FR) DISPOSITIF DE PORTE LOGIQUE À MÉMOIRE RÉSISTIVE RÉVERSIBLE
Abstract
(EN) A memory device includes two phase change memory (PCM) cells and a bridge. The first PCM cell includes an electrical input and a phase change material. The second PCM cell includes an electrical input that is independent from the electrical input of the first PCM cell and another phase change material. The bridge is electrically connected to the two PCM cells.
(FR) Un dispositif de mémoire comprend deux cellules de mémoire à changement de phase (PCM) et un pont. La première cellule PCM comprend une entrée électrique et un matériau à changement de phase. La seconde cellule PCM comprend une entrée électrique qui est indépendante de l'entrée électrique de la première cellule PCM et un autre matériau à changement de phase. Le pont est électriquement connecté aux deux cellules PCM.
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