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1. WO2022207221 - OPTOELECTRONIC SEMICONDUCTOR CHIP

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Publication Number WO/2022/207221
Publication Date 06.10.2022
International Application No. PCT/EP2022/055266
International Filing Date 02.03.2022
IPC
H01S 5/042 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping
042Electrical excitation
H01S 5/185 2021.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
18Surface-emitting lasers
185having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers
H01S 5/18 2021.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
18Surface-emitting lasers
H01S 5/026 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/343 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
343in AIIIBV compounds, e.g. AlGaAs-laser
CPC
H01S 5/0087
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
0087for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
H01S 5/0267
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
0267Integrated focusing lens
H01S 5/04257
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
042Electrical excitation ; ; Circuits therefor
0425Electrodes, e.g. characterised by the structure
04256characterised by the configuration
04257having positive and negative electrodes on the same side of the substrate
H01S 5/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
H01S 5/185
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
185having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
H01S 5/34333
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
343in AIIIBV compounds, e.g. AlGaAs-laser ; , InP-based laser
34333with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Applicants
  • AMS-OSRAM INTERNATIONAL GMBH [DE]/[DE]
Inventors
  • HALBRITTER, Hubert
  • JENTZSCH, Bruno
  • GOMEZ-IGLESIAS, Alvaro
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
10 2021 108 200.531.03.2021DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHER HALBLEITERCHIP
(EN) OPTOELECTRONIC SEMICONDUCTOR CHIP
(FR) PUCE SEMI-CONDUCTRICE OPTOÉLECTRONIQUE
front page image
Abstract
(DE) In mindestens einer Ausführungsform umfasst der optoelektronische Halbleiterchip (1) - eine Halbleiterschichtenfolge (2), in der sich mindestens eine aktive Zone (22) zur Erzeugung von Strahlung (R) befindet, und - eine erste Elektrode (31) und eine zweite Elektrode (32), mit denen die Halbleiterschichtenfolge (2) elektrisch kontaktiert ist, wobei - die Halbleiterschichtenfolge (2) im Bereich der aktiven Zone (22) mindestens eine schräg verlaufende Facette (41, 42) aufweist, die für eine Strahlumlenkung der Strahlung (R) eingerichtet ist, und - sich die erste Elektrode (31) und die zweite Elektrode (32) an derselben Montageseite (20) der Halbleiterschichtenfolge (2) wie die mindestens eine schräg verlaufende Facette (41, 42) befinden und die Montageseite (20) eine Hauptseite der Halbleiterschichtenfolge (2) ist, und - eine Auskopplung der Strahlung (R) an einer der Montageseite (20) gegenüberliegenden Abstrahlseite (21) der Halbleiterschichtenfolge (2) erfolgt.
(EN) In at least one embodiment, the optoelectronic semiconductor chip (1) comprises: - a semiconductor layer sequence (2), in which there is at least one active zone (22) for generating radiation (R); and - a first electrode (31) and a second electrode (32), with which the semiconductor layer sequence (2) is in electrical contact; wherein the semiconductor layer sequence (2) has, in the region of the active zone (22), at least one obliquely extending facet (41, 42) designed for a beam deflection of the radiation (R); wherein the first electrode (31) and the second electrode (32) are on the same mounting side (20) of the semiconductor layer sequence (2) as the at least one obliquely extending facet (41, 42), and the mounting side (20) is a main side of the semiconductor layer sequence (2); and wherein the radiation (R) is coupled out on an emission side (21) of the semiconductor layer sequence (2) opposite from the mounting side (20).
(FR) Dans au moins un mode de réalisation, l'invention concerne une puce semi-conductrice optoélectronique (1) qui comprend une succession de couches semi-conductrices (2) dans laquelle se trouve au moins une zone active (22) pour produire un rayonnement (R) ; et une première électrode (31) et une deuxième électrode (32) au moyen desquelles la succession de couches semi-conductrices (2) est mise en contact électrique ; la succession de couches semi-conductrices (2) comprend dans la région de la zone active (22) au moins une facette inclinée (41, 42) qui est conçue pour dévier un faisceau du rayonnement (R) ; la première électrode (31) et la deuxième électrode (32) étant disposées sur le même côté de montage (20) que la succession de couches semi-conductrices (2) comme la ou les facettes inclinées (41, 42) ; et le côté de montage (20) étant un côté principal de la succession de couches semi-conductrices (2) ; et le rayonnement (R) étant extrait sur un côté d'émission (21) de la succession de couches semi-conductrices (2) opposé au côté de montage (20).
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