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1. WO2022164088 - MICRO-LED DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE USING SAME

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Publication Number WO/2022/164088
Publication Date 04.08.2022
International Application No. PCT/KR2022/000563
International Filing Date 12.01.2022
IPC
H01L 33/38 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/40 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
H01L 33/62 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 27/15 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/78
H01L 33/52 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
CPC
H01L 25/075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
H01L 27/156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
156two-dimensional arrays
H01L 2933/0016
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0016relating to electrodes
H01L 2933/005
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
005relating to encapsulations
Applicants
  • 주식회사 어드밴스트뷰테크널러지 ADVANCED VIEW TECHNOLOGY [KR]/[KR]
Inventors
  • 진정근 JHIN, Jung-Geun
  • 김재균 KIM, Jae-Kyun
Agents
  • 특허법인(유한) 대아 DAE-A INTELLECTUAL PROPERTY CONSULTING
Priority Data
10-2021-001176527.01.2021KR
Publication Language Korean (ko)
Filing Language Korean (KO)
Designated States
Title
(EN) MICRO-LED DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE USING SAME
(FR) DISPOSITIF À MICRO-DEL, SON PROCÉDÉ DE FABRICATION ET DISPOSITIF D'AFFICHAGE L'UTILISANT
(KO) 마이크로 LED 소자, 이의 제조 방법 및 이를 이용한 디스플레이 장치
front page image
Abstract
(EN) The present invention provides a micro-LED device having high applicability to fluid-based assembly technology, a method for manufacturing same, and a display device using same. The micro-LED device according to the present invention may comprise: an n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; an insulating layer surrounding at least the outer circumferential surface of the active layer; and a multilayer electrode part disposed at the outer circumferential surface of the insulating layer.
(FR) La présente invention concerne un dispositif à micro-DEL ayant une applicabilité élevée à une technologie d'assemblage à base de fluide, son procédé de fabrication et un dispositif d'affichage l'utilisant. Le dispositif à micro-DEL selon la présente invention peut comprendre : une couche semi-conductrice de type n ; une couche active disposée sur la couche semi-conductrice de type n ; une couche semi-conductrice de type p disposée sur la couche active ; une couche isolante entourant au moins la surface circonférentielle externe de la couche active ; et une partie d'électrode multicouche disposée au niveau de la surface circonférentielle externe de la couche isolante.
(KO) 본 발명은 유체를 기반으로 한 어셈블리 기술에 활용도가 높은 마이크로 LED 소자, 이의 제조 방법 및 이를 이용한 디스플레이 장치에 대하여 개시한다. 본 발명에 따른 마이크로 LED 소자는 n형 반도체층; 상기 n형 반도체층 상에 배치되는 활성층; 상기 활성층 상에 배치되는 p형 반도체층; 적어도 상기 활성층의 외주면을 감싸는 절연층; 및 상기 절연층의 외주면에 배치되는 다층 전극부를 포함할 수 있다.
Related patent documents
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